BCX41
NPN Silicon AF and Switching Transistor
•
For general AF applications
•
High breakdown voltage
•
Low collector-emitter saturation voltage
•
Complementary type: BCX42 (PNP)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
1
2
Type
BCX41
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Marking
EKs
Pin Configuration
1=B
2=E
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
3=C
Package
SOT23
Unit
V
Value
125
125
5
800
1
100
200
330
150
-65 ... 150
Value
≤
215
mA
A
mA
mW
°C
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation
T
S
≤
79 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-10-04
BCX41
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
125
I
C
= 10 mA,
I
B
= 0
Unit
V
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
125
5
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 100 V,
I
E
= 0
V
CB
= 100 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
CEO
-
-
-
-
-
0.1
20
10
75
100
nA
-
Collector-emitter cutoff current
V
CE
= 100 V,
T
A
= 85 °C
V
CE
= 100 V,
T
A
= 125 °C
-
-
I
EBO
h
FE
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
-
DC current gain
1)
I
C
= 100 µA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
I
C
= 200 mA,
V
CE
= 1 V
25
63
40
V
CEsat
V
BEsat
-
-
-
-
-
-
-
-
0.9
1.4
V
Collector-emitter saturation voltage
1)
I
C
= 300 mA,
I
B
= 30 mA
-
-
Base emitter saturation voltage
1)
I
C
= 300 mA,
I
B
= 30 mA
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 20 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1
Pulse
f
T
C
cb
-
-
100
12
-
-
MHz
pF
test: t < 300µs; D < 2%
2
2011-10-04
BCX41
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 1 V
10
3
BCX 41/BSS 64
EHP00427
Collector-emitter saturation voltage
I
C
=
ƒ
(V
CEsat
),
h
FE
= 10
10
mA
3 BCX 41/BSS 64
EHP00425
h
FE
5
Ι
C
10
150 ˚C
25 ˚C
-50 ˚C
5
2
150 ˚C
25 ˚C
-50 ˚C
10
2
10
5
1
5
10
5
0
10
1
10
-1
5 10
0
5 10
1
5 10
2
mA 10
3
10
-1
0
200
400
600 mV 800
V
CE sat
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ
(V
BEsat
),
h
FE
= 10
10
3
mA
BCX 41/BSS 64
EHP00424
Collector current
I
C
=
ƒ
(V
BE
)
V
CE
= 1V
10
3
mA
BCX 41/BSS 64
EHP00421
Ι
C
10
2
5
150 ˚C
25 ˚C
-50 ˚C
Ι
C
10
2
5
T
A
= 150 ˚C
25 ˚C
-50 ˚C
10
1
5
10
1
5
10
5
0
10
5
0
10
-1
0
1
2
V
V
BE sat
3
10
-1
0
1
2
V
V
BE
3
3
2011-10-04
BCX41
Collector cutoff current
I
CBO
=
ƒ
(T
A
)
V
CBO
= 80 V
10
4
nA
BCX 41/BSS 64
EHP00426
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= 5 V
10
3
MHz
BCX 41/BSS 64
EHP00423
Ι
CB0
10
5
3
max
f
T
5
10
2
5
10
1
5
10
0
10
2
typ
5
5
10
-1
10
1
10
0
0
50
100
˚C
T
A
150
5 10
1
5
10
2
mA
10
3
Ι
C
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(V
EB
)
100
pF
Total power dissipation
P
tot
=
ƒ
(T
S
)
400
mW
C
CB
(C
EB
)
80
300
70
P
tot
CEB
CCB
60
50
40
30
250
200
150
100
20
10
0
0
50
5
10
V
20
0
0
15
30
45
60
75
90 105 120
V
CB
(V
EB
T
S
°C
150
4
2011-10-04
BCX41
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
3
P
tot max
5
P
tot DC
BCX 41/BSS 64
EHP00422
t
p
D
=
T
t
p
T
10
2
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
5
2011-10-04
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