INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUT131H
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 450V(Min)
·High
Switching Speed
APPLICATIONS
·Designed
for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage V
BE
= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
850
450
6
5
10
4
8
80
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.56
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BUT131H
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A ;I
B
= 0; L= 10mH
B
450
V
V
CE(sat)-1
Collector-Emitter Saturation Voltage
I
C
= 1.5A; I
B
= 0.15A
1.0
V
V
CE(sat)-2
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.3A
B
2.5
V
V
BE(sat)
I
CEV
Base-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.3A
B
1.5
0.25
1.5
1.0
V
Collector Cutoff Current
V
CE
=V
CESmax
;V
BE
=-1.5V
V
CE
=V
CESmax
;V
BE
=-1.5V;T
J
=100℃
V
EB
= 6V; I
C
=0
mA
I
EBO
Emitter Cutoff Current
mA
h
FE
DC Current Gain
I
C
= 5A ; V
CE
= 5V
5
C
OB
Output Capacitance
I
E
= 0; V
CB
= 10V; f
test
= 1kHz
200
pF
Switching Times; Resistive Load
μs
μs
μs
t
on
t
stg
t
f
Turn-On Time
0.4
Storage Time
I
C
= 3A; I
B1
= 0.3A; I
B2
= -0.6A
1.2
Fall Time
0.12
isc Website：www.iscsemi.cn
2
Analog electronics
京公网安备 11010802033920号
EEWORLD
