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KBU608

Description
Bridge Rectifier Diode, 1 Phase, 6A, 800V V(RRM), Silicon, KBU, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size45KB,1 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

KBU608 Overview

Bridge Rectifier Diode, 1 Phase, 6A, 800V V(RRM), Silicon, KBU, 4 PIN

KBU608 Parametric

Parameter NameAttribute value
package instructionR-PSIP-W4
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSIP-W4
Maximum non-repetitive peak forward current250 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current0.00001 µA
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer
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