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DB106-C-HF

Description
1A, 800V, SILICON, BRIDGE RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DB-1, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size158KB,6 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Download Datasheet Parametric View All

DB106-C-HF Overview

1A, 800V, SILICON, BRIDGE RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DB-1, 4 PIN

DB106-C-HF Parametric

Parameter NameAttribute value
package instructionR-PDIP-T4
Contacts4
Manufacturer packaging codeDB-1
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDIP-T4
JESD-609 codee3
Maximum non-repetitive peak forward current40 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Base Number Matches1
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
*
Good for automation insertion
Surge overload rating - 40 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 1.0 gram
DB101
THRU
DB107
DB-1
MECHANICAL DATA
* Epoxy: Device has UL flammability classification 94V-O
* UL listed under the recognized component directory, file #E94233.
.255 (6.5)
.245 (6.2)
.350 (8.9)
.300 (7.6)
.335 (8.8)
.320 (7.8)
.135 (3.4)
.115 (2.9)
.165 (4.2)
.020
(0.5)
.205 (5.2)
.195 (5.0)
.060
(1.5)
.155 (3.9)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
resistive or inductive load.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 40 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Current Squarad Time
Typical Thermal Resistance (Note 2)
R
q
JL
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@T
A
= 25
o
C
@T
A
= 125 C
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
I
2
t
R
q
JA
DB101
50
35
50
DB102
100
70
100
DB103
200
140
200
DB104
400
280
400
1.0
40
DB105
600
420
600
DB106
800
560
800
DB107
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
6.6
40
15
-55 to + 150
A /Sec
0
2
C/W
0
T
J,
T
STG
C
SYMBOL
V
F
I
R
DB101
DB102
DB103
DB104
1.1
5.0
0.5
DB105
DB106
DB107
UNITS
Volts
mAmps
mAmps
2011-04
REV:B
Note: 1.”Fully ROHS compliant”,”100% Sn plating(Pb-free).
2. Thermal Resistance: PCB mounted.
3. Available in Halogen-free epoxy by adding suffix -HF after the part nbr.
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