DATA SHEET
COMPOUND FIELD EFFECT TRANSISTOR ARRAY
µ
PA1550
N-CHANNEL POWER MOS FET ARRAY
FOR SWITCHING
µ
PA1550 is a N-channel vertical power MOS FET and this
switching device is available for direct drive by output of 5 V power
supply IC.
This device features low on-resistance and excellent switching
characteristic, and is ideal for control of devices such as mortars,
solenoid, or ramp.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Gate drive available at logic level (V
GS
= 4 V)
• High current capacity and low on-resistnace
I
D(pulse)
=
±20
A
R
DS(on)
= 0.09
Ω
TYP. @V
GS
= 10 V
R
DS(on)
= 0.11
Ω
TYP. @V
GS
= 4 V
• Easy to mount the printing board due to 2.54 mm (0.1 inch) interval
of lead pins
• Small dimension and no electrode exposure except lead pins
enable the high density mounting.
ELECTRODE CONNECTION
ORDERING INFORMATION
Part Number
Package
10-pin SIP
Quality
Standard
µ
PA1550H
2, 4, 6, 8 : Gate (G)
3, 5, 7, 9 : Drain (D)
1, 10 : Source (S)
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
INTERNAL EQUIVALENT
CIRCUIT
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16142EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
µ
PA1550
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current (pulse)
Total power dissipation
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
*
P
T2
*
T
ch
T
stg
V
GS
= 0
V
DS
= 0
T
C
= 25°C
PW
≤
10
µ
s
duty cycle
≤
1 %
T
C
= 25°C
T
a
= 25°C
Conditions
Ratings
30
±20
±5
±20
3.5
28
150
−55
to +150
Unit
V
V
A/unit
A/unit
W
W
°C
°C
* When all 4 elements are ON.
ELECTRICAL CHARACTERISTICS (VCC = 5V, Ta = 25°C)
°
Parameter
Drain cutoff current
Gate leakage current
Gate cutoff voltage
Forward transfer
admittance
Drain to source on-state
resistance
Drain to source on-state
resistance
Input capacitance
Output capacitance
Return capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
V
GS(off)
y
ts
Conditions
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 3 A
0.8
4.0
5.0
MIN.
TYP.
MAX.
10
±100
2.5
Unit
µ
A
nA
V
S
R
DS(on)1
V
GS
= 10 V, I
D
= 3 A
90
100
mΩ
R
DS(on)2
V
GS
= 4 V, I
D
= 3 A
110
150
mΩ
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
I
D
= 3 A
V
GS(on)
= 10 V
V
DD
= 5
Ω
R
L
= 5
Ω,
R
in
= 10
Ω
Refer to the test circuit.
900
400
100
10
40
110
30
pF
pF
pF
ns
ns
ns
ns
TEST CIRCUIT DIAGRAM: SWITCHING TIME
2
Data Sheet G16142EJ1V0DS
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