SST29VF040-55-4I-NH datasheet, PDF

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SST29VF040-55-4I-NH: DescriptionFlash, 512KX8, 55ns, PQCC32, PLASTIC, MS-016AE, LCC-32; Categorystorage storage; File Size271KB，24 Pages; ManufacturerSilicon Laboratories Inc

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SST29VF040-55-4I-NH Overview

Flash, 512KX8, 55ns, PQCC32, PLASTIC, MS-016AE, LCC-32

SST29VF040-55-4I-NH Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	QFJ
package instruction	QCCJ, LDCC32,.5X.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	55 ns
Data polling	YES
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.97 mm
memory density	4194304 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	4K
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	3.55 mm
Department size	128
Maximum standby current	0.000015 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	10
switch bit	YES
type	NOR TYPE
width	11.43 mm
Base Number Matches	1

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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash

SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040

SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040

SST29SF/VF512 / 010 / 020 / 0405.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) Byte-Program, Small Erase Sector flash memories

Preliminary Specifications

FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations

– 5.0V-only for SST29SF512/010/020/040

– 2.7-3.6V for SST29VF512/010/020/040

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 10 mA (typical)

– Standby Current:

30 µA (typical) for SST29SF512/010/020/040

1 µA (typical) for SST29VF512/010/020/040

• Sector-Erase Capability

– Uniform 128 Byte sectors

• Fast Read Access Time:

– 55 ns

– 70 ns

• Latched Address and Data

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

1 second (typical) for SST29SF/VF512

2 seconds (typical) for SST29SF/VF010

4 seconds (typical) for SST29SF/VF020

8 seconds (typical) for SST29SF/VF040

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility for SST29SFxxx

• CMOS I/O Compatibility for SST29VFxxx

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-pin PLCC

– 32-pin TSOP (8mm x 14mm)

– 32-pin PDIP

PRODUCT DESCRIPTION

The SST29SF512/010/020/040 and SST29VF512/010/

020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS

Small-Sector Flash (SSF) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST29SFxxx devices write

(Program or Erase) with a 4.5-5.5V power supply. The

SST29VFxxx devices write (Program or Erase) with a 2.7-

3.6V power supply. These devices conform to JEDEC stan-

dard pinouts for x8 memories.

Featuring high performance Byte-Program, the

SST29SFxxx and SST29VFxxx devices provide a maxi-

mum Byte-Program time of 20 µsec. To protect against

inadvertent write, they have on-chip hardware and Soft-

ware Data Protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of at least

10,000 cycles. Data retention is rated at greater than 100

years.

The SST29SFxxx and SST29VFxxx devices are suited for

applications that require convenient and economical updat-

ing of program, configuration, or data memory. For all sys-

tem applications, they significantly improve performance

S71160-05-000 5/01

505

and reliability, while lowering power consumption. They

inherently use less energy during Erase and Program than

alternative flash technologies. The total energy consumed

is a function of the applied voltage, current, and time of

application. Since for any given voltage range, the Super-

Flash technology uses less current to program and has a

shorter erase time, the total energy consumed during any

Erase or Program operation is less than alternative flash

technologies. They also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST29SFxxx and SST29VFxxx devices are offered in 32-

pin PLCC and 32-pin TSOP packages. A 600 mil, 32-pin

PDIP is also offered for SST29SFxxx devices. See Figures

1, 2, and 3 for pinouts.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

SSF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

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