SST29VF512-70-4C-WHE datasheet, PDF

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SST29VF512-70-4C-WHE: Description64K X 8 FLASH 2.7V PROM, 70 ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32; Categorystorage storage; File Size349KB，25 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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SST29VF512-70-4C-WHE Overview

64K X 8 FLASH 2.7V PROM, 70 ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32

SST29VF512-70-4C-WHE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TSOP1
package instruction	TSOP1,
Contacts	32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	70 ns
JESD-30 code	R-PDSO-G32
JESD-609 code	e3
length	12.4 mm
memory density	524288 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
type	NOR TYPE
width	8 mm
Base Number Matches	1

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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash

SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040

SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040

SST29SF/VF512 / 010 / 020 / 040512Kb / 1Mb / 2Mb / 4Mb (x8)

Byte-Program, Small-Sector flash memories

Data Sheet

FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations

– 4.5-5.5V for SST29SF512/0x0

– 2.7-3.6V for SST29VF512/0x0

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 10 mA (typical)

– Standby Current:

30 µA (typical) for SST29SF512/0x0

1 µA (typical) for SST29VF512/0x0

• Sector-Erase Capability

– Uniform 128 Byte sectors

• Fast Read Access Time:

– 55 ns for SST29SF512/0x0

– 70 ns for SST29VF512/0x0

• Latched Address and Data

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

1 second (typical) for SST29SF/VF512

2 seconds (typical) for SST29SF/VF010

4 seconds (typical) for SST29SF/VF020

8 seconds (typical) for SST29SF/VF040

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility for SST29SF512/0x0

• CMOS I/O Compatibility for SST29VF512/0x0

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

• All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST29SF512/0x0 and SST29VF512/0x0 are 64K x8 /

128K x8 / 256K x8 / 512K x8 CMOS Small-Sector Flash

(SSF) manufactured with SST’s proprietary, high-perfor-

mance CMOS SuperFlash technology. The split-gate cell

design and thick-oxide tunneling injector attain better reli-

ability and manufacturability compared with alternate

approaches. The SST29SF512/0x0 devices write (Pro-

gram or Erase) with a 4.5-5.5V power supply. The

SST29VF512/0x0 devices write (Program or Erase) with a

2.7-3.6V power supply. These devices conform to JEDEC

standard pin assignments for x8 memories.

Featuring high performance Byte-Program, the

SST29SF512/0x0 and SST29VF512/0x0 devices provide

a maximum Byte-Program time of 20 µsec. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of at least

10,000 cycles. Data retention is rated at greater than 100

years.

The SST29SF512/0x0 and SST29VF512/0x0 devices are

suited for applications that require convenient and econom-

ical updating of program, configuration, or data memory.

S71160-11-000

3/05

For all system applications, they significantly improve per-

formance and reliability, while lowering power consumption.

They inherently use less energy during Erase and Program

than alternative flash technologies. The total energy con-

sumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash technologies. They also improve flexibility while lower-

ing the cost for program, data, and configuration storage

applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST29SF512/0x0 and SST29VF512/0x0 devices are

offered in 32-lead PLCC and 32-lead TSOP packages.

See Figures 1 and 2 for pin assignments.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

SSF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

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