BC548 / BC548A / BC548B / BC548C
BC548
BC548A
BC548B
BC548C
E
B
TO-92
C
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CES
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30
30
5.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
BC548 / A / B / C
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation
548-ABC, Rev B
BC548 / BC548A / BC548B / BC548C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= +150
°C
30
30
30
5.0
15
5.0
V
V
V
V
nA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 2.0 mA
548
548A
548B
548C
110
110
200
420
800
220
450
800
0.25
0.60
0.70
0.77
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5.0 mA
V
CE
= 5.0 V, I
C
= 2.0 mA
V
CE
= 5.0 V, I
C
= 10 mA
0.58
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
h
fe
NF
Small-Signal Current Gain
Noise Figure
I
C
= 2.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
V
CE
= 5.0 V, I
C
= 200
µA,
R
S
= 2.0 kΩ, f = 1.0 kHz,
B
W
= 200 Hz
125
900
10
dB
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not intended to be an exhaustive list of all such trademarks.
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E
2
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TM
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TM
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DISCLAIMER
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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