CZR1-04CBKLEADFREE datasheet, PDF

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CZR1-04CBKLEADFREE: DescriptionRectifier Diode, 1 Phase, 2 Element, 2A, 400V V(RRM), Silicon, SOT-223, 4 PIN; CategoryDiscrete semiconductor diode; File Size365KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CZR1-04CBKLEADFREE Overview

Rectifier Diode, 1 Phase, 2 Element, 2A, 400V V(RRM), Silicon, SOT-223, 4 PIN

CZR1-04CBKLEADFREE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SOT-223, 4 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
application	HIGH VOLTAGE
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	10 A
Number of components	2
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	2 W
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	1 µA
Maximum reverse recovery time	1 µs
Reverse test voltage	400 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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CZR1-04C

SURFACE MOUNT

DUAL, COMMON CATHODE

HIGH VOLTAGE

SILICON RECTIFIERS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZR1-04C type

is a General Purpose Dual Silicon Rectifier, connected

in a Common Cathode configuration, designed for

applications requiring high voltage capability.

MARKING: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS:

(TA=25°C)

Reverse Voltage

Peak Reverse Voltage

Average Forward Current

Peak Forward Surge Current, t=10ms

Operating and Storage Junction Temperature

Power Dissipation

Thermal Resistance

SYMBOL

VR

VRM

IO

IFSM

TJ, Tstg

PD

Θ

JA

400

2.0

10

-65 to +150

2.0

62.5

UNITS

V

A

°C

W

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

IR

BVR

VF

trr

CJ

VR=400V

VR=400V, TA=150°C

IR=100µA

IF=1.0A

IF=2.0A

IF=200mA, IR=200mA, Irr=20mA

VR=0, f=1.0MHz

1.0

26

1.0

50

400

1.2

1.5

UNITS

µA

V

µs

pF

R7 (23-February 2010)

CZR1-04CBKLEADFREE Related Products

	CZR1-04CBKLEADFREE	CZR1-04CTR	CZR1-04CTR13	CZR1-04CTRLEADFREE	CZR1-04CBK
Description	Rectifier Diode, 1 Phase, 2 Element, 2A, 400V V(RRM), Silicon, SOT-223, 4 PIN	Rectifier Diode, 1 Phase, 2 Element, 2A, 400V V(RRM), Silicon, SOT-223, 4 PIN	Rectifier Diode, 2A, 400V V(RRM),	Rectifier Diode, 1 Phase, 2 Element, 2A, 400V V(RRM), Silicon, SOT-223, 4 PIN	Rectifier Diode, 1 Phase, 2 Element, 2A, 400V V(RRM), Silicon, SOT-223, 4 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V	1.5 V	1.2 V	1.5 V	1.5 V
Maximum non-repetitive peak forward current	10 A	10 A	10 A	10 A	10 A
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	2 A	2 A	2 A	2 A	2 A
Maximum repetitive peak reverse voltage	400 V	400 V	400 V	400 V	400 V
surface mount	YES	YES	YES	YES	YES
Base Number Matches	1	1	1	1	1
package instruction	SOT-223, 4 PIN	SOT-223, 4 PIN	-	SOT-223, 4 PIN	SOT-223, 4 PIN
application	HIGH VOLTAGE	HIGH VOLTAGE	-	HIGH VOLTAGE	HIGH VOLTAGE
Shell connection	CATHODE	CATHODE	-	CATHODE	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	-	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	-	SILICON	SILICON
JESD-30 code	R-PDSO-G4	R-PDSO-G4	-	R-PDSO-G4	R-PDSO-G4
Number of components	2	2	-	2	2
Phase	1	1	-	1	1
Number of terminals	4	4	-	4	4
Minimum operating temperature	-65 °C	-65 °C	-	-65 °C	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	2 W	2 W	-	2 W	2 W
Maximum reverse current	1 µA	1 µA	-	1 µA	1 µA
Maximum reverse recovery time	1 µs	1 µs	-	1 µs	1 µs
Reverse test voltage	400 V	400 V	-	400 V	400 V
Terminal form	GULL WING	GULL WING	-	GULL WING	GULL WING
Terminal location	DUAL	DUAL	-	DUAL	DUAL
Maker	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	-
JESD-609 code	-	e0	-	e3	e0
Terminal surface	-	TIN LEAD	-	Matte Tin (Sn)	TIN LEAD

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