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BF224RLRM

Description
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size334KB,24 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BF224RLRM Overview

VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

BF224RLRM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)850 MHz
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
RF Transistor
NPN Silicon
COLLECTOR
1
3
BASE
2
EMITTER
BF224
1
2
3
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
30
45
4.0
50
350
2.8
1.0
8.0
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
V(BR)CEO
30
V(BR)CBO
45
V(BR)EBO
4.0
ICBO
IEBO
100
100
nAdc
nAdc
Vdc
Vdc
Vdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–235

BF224RLRM Related Products

BF224RLRM BF224RL BF224RL1 BF224RLRA BF224ZL1 BF224RLRE BF224
Description VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP RF Small Signal VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 PLASTIC, TO-226AA, 3 PIN
Contacts 3 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 225 225 225 225 225 225 225
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 850 MHz 850 MHz 850 MHz 850 MHz 850 MHz 850 MHz 850 MHz
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
Maker - - ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
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