CAT28F512TRA-90T datasheet, PDF

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CAT28F512TRA-90T: Description64KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32; Categorystorage storage; File Size96KB，16 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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CAT28F512TRA-90T Overview

64KX8 FLASH 12V PROM, 90ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32

CAT28F512TRA-90T Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TSOP
package instruction	TSOP1-R, TSSOP32,.8,20
Contacts	32
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	90 ns
Other features	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS
command user interface	YES
Data polling	NO
Data retention time - minimum	10
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G32
length	18.4 mm
memory density	524288 bit
Memory IC Type	FLASH
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	105 °C
Minimum operating temperature	-40 °C
organize	64KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1-R
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Programming voltage	12 V
Certification status	Not Qualified
reverse pinout	YES
Maximum seat height	1.2 mm
Maximum standby current	0.00001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
type	NOR TYPE
width	8 mm
Base Number Matches	1

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CAT28F512

512K-Bit CMOS Flash Memory

FEATURES

Fast Read Access Time: 90/120/150 ns

Low Power CMOS Dissipation:

Licensed Intel

second source

Commercial, Industrial and Automotive

Temperature Ranges

Stop Timer for Program/Erase

On-Chip Address and Data Latches

JEDEC Standard Pinouts:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100

A max (CMOS levels)

High Speed Programming:

–10

s per byte

–1 Sec Typ Chip Program

12.0V

5% Programming and Erase Voltage

–32-pin DIP

–32-pin PLCC

–32-pin TSOP ( 8 x 20)

100,000 Program/Erase Cycles

10 Year Data Retention

"Green" Package Options Available

Electronic Signature

DESCRIPTION

The CAT28F512 is a high speed 64K x 8-bit electrically

erasable and reprogrammable Flash memory ideally

suited for applications requiring in-system or after-sale

code updates. Electrical erasure of the full memory

contents is achieved typically within 0.5 second.

It is pin and Read timing compatible with standard

EPROM and EEPROM devices. Programming and Erase

are performed through an operation and verify algo-

rithm. The instructions are input via the I/O bus, using a

two write cycle scheme. Address and Data are latched

to free the I/O bus and address bus during the write

operation.

The CAT28F512 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 10 years. The device is available in JEDEC

approved 32-pin plastic DIP, 32-pin PLCC or 32-pin

TSOP packages.

BLOCK DIAGRAM

I/O0–I/O7

I/O BUFFERS

ERASE VOLTAGE

SWITCH

COMMAND

PROGRAM VOLTAGE

SWITCH

CE, OE LOGIC

DATA

LATCH

SENSE

AMP

ADDRESS LATCH

Y-GATING

Y-DECODER

524,288 BIT

MEMORY

ARRAY

A0–A15

X-DECODER

VOLTAGE VERIFY

SWITCH

Characteristics subject to change without notice

Doc. No. MD-1084, Rev. K

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