TLP759(IGM)
TENTATIVE
TOSHIBA Photocoupler GaAℓAs Ired + Photo IC
TLP759(IGM)
Transistor Invertor
Inverter For Air Conditioner
Line Receiver
IPM Interfaces
The TOSHIBA TLP759(IGM) consists of a GaAℓAs high
−
output light
emitting diode and a high speed detector of one chip photo diode-
transistor.
This unit is 8
−
lead DIP.
TLP759(IGM) has no internal base connection, and a faraday shield
integrated on the photodetector chip provides an effective common
mode noise transient immunity.
TLP759(IGM) guarantees minimum and maximum of propagation
delay time, switching time dispersion, and high common mode
transient immunity. Therefor TLP759(IGM) is suitable for isolation
interface between IPM(intelligent power module) and control IC
circuits in motor control application.
Unit in mm
TOSHIBA
Weight: 0.54 g
11−10C4
·
·
Isolation voltage: 5000V
rms
(min.)
Common mode transient immunity
: ±10kV / µs (min.)
@V
CM
=
1500
V
Switching Time
: t
pHL,
t
pLH
= 0.1µs (min.)
= 0.8µs (max.)
@I
F
=
10mA,V
CC
=
15V,R
L
= 20kΩ,Ta = 25°C
Switching time dispersion: 0.7µs (max.)
(|t
pLH
-t
pHL
|)
TTL compatible
UL recognized: UL1577, file no.E67349
Pin Configuration
(top view)
1
2
3
4
Shield
8
7
6
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : Emitter
6 : Collector
7 : N.C.
8 : V
CC
·
·
·
·
Schematic
I
CC
I
F
V
F
2
3
6
Shield
5
I
O
V
O
GND
8
V
CC
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2003-02-19
TLP759(IGM)
·
Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 6000V
PK
(Note 1) When a VDE0884 approved type is needed,
please designate the “Option (D4)”
·
Structural parameter
7.62mm pich TLP759 (IGM)
Creepage distance: 7.0mm (min.)
Clearance: 7.0mm (min.)
Insulation thickness: 0.4mm (min.)
Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Pulse forward current
LED
Peak transient forward current
Reverse voltage
Diode power dissipation
Output current
Detector
Peak output current
Output voltage
supply voltage
Output power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature(10s)
Isolation voltage(AC,1min.,R.H.≤60%,Ta=25°C)
(Note 7)
(Note 8)
(Note 6)
(Note 5)
(Note 2)
(Note 3)
(Note 4)
Symbol
I
F
I
FP
I
FPT
V
R
P
D
I
O
I
OP
V
O
V
CC
P
O
T
opr
T
stg
T
sol
BV
S
Rating
25
50
1
5
45
8
16
-0.5~20
-0.5~30
100
-55~100
-55~125
260
5000
Unit
mA
mA
A
V
mW
mA
mA
V
V
mW
°C
°C
°C
V
rms
(Note 2): Derate 0.8mA above 70°C.
(Note 3): 50% duty cycle,1ms pulse width.
Derate 1.6mA / °C above 70°C.
(Note 4): Pulse width PW
≤
1µs,300pps.
(Note 5): Derate 0.9mW / °C above 70°C.
(Note 6): Derate 2mW / °C above 70°C.
(Note 7): Soldering portion of lead: Up to 2mm from the body of the device.
(Note 8): Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together and
pins 5, 6, 7 and 8 shorted together.
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2003-02-19
TLP759(IGM)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Forward voltage
temperature coefficient
Reverse current
Capacitance between
terminal
Symbol
V
F
∆V
F
/
∆Ta
I
R
C
T
I
OH (1)
High level output current
Detector
I
OH (2)
I
OH
High level supply
voltage
Supply voltage
Output voltage
I
CCH
V
CC
V
O
I
F
= 16mA
I
F
= 16mA
V
R
= 5V
V
F
= 0,f = 1MHz
I
F
= 0mA,V
CC
= V
O
= 5.5V
I
F
= 0mA,V
CC
= 30V
V
O
= 20V
I
F
= 0mA,V
CC
= 30V
V
O
= 20V,Ta = 70°C
I
F
= 0mA,V
CC
= 30V
I
CC
= 0.01mA
I
O
= 0.5mA
―
―
―
―
―
―
―
30
20
Test Condition
Min.
Typ.
1.65
-2
―
45
3
―
―
0.01
―
―
Max.
1.85
―
10
―
500
5
µA
50
1
―
―
µA
V
V
Unit
V
mV / °C
µA
pF
nA
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
I
F
= 10mA,V
CC
= 4.5V
V
O
= 0.4V
I
F
= 16mA,V
CC
= 4.5V
V
O
= 0.4V,Ta =
-25~100°C
I
F
= 16mA,V
CC
= 4.5V
I
O
= 2.4mA
Min.
25
15
―
Typ.
35
―
―
Max.
75
%
―
0.4
V
Unit
Current transfer ratio
I
O
/ I
F
Low level output voltage
V
OL
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V = 0,f = 1MHz
R.H.
≤
60%,V
S
= 500V
AC,1 minute
Isolation voltage
BV
S
AC,1 second,in oil
DC,1 minute,in oil
(Note 8)
(Note 8)
Min.
―
1×10
12
5000
―
―
Typ.
0.8
10
14
―
10000
10000
Max.
―
―
―
―
―
Unit
pF
Ω
V
rms
Vdc
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2003-02-19
TLP759(IGM)
Switching Characteristics
(Ta = 25°C,V
CC
= 15V)
Characteristic
Propagation delay time
(H→L)
Propagation delay time
(L→H)
Symbol
t
pHL
Test
Cir-
cuit
Test Condition
I
F
= 10mA,R
L
= 20kΩ
I
F
= 10mA,R
L
= 20kΩ
Ta = 0~85°C
I
F
= 10mA,R
L
= 20kΩ
Ta =
-25~100°C
I
F
= 10mA,R
L
= 20kΩ
I
F
= 10mA,R
L
= 20kΩ
Ta = 0~85°C
I
F
= 10mA,R
L
= 20kΩ
Ta =
-25~100°C
CM
H
(Note 9)
Common mode
transient immunity at
logic low output
(Note 9)
CM
L
2
I
F
= 0mA
V
CM
= 1500V
p-p
R
L
= 20kΩ
I
F
=10mA
V
CM
= 1500V
p-p
R
L
= 20kΩ
Min.
0.1
0.1
0.1
―
―
―
Typ.
0.45
0.45
0.45
0.15
0.25
0.25
Max.
0.8
0.9
1.0
0.7
0.8
0.9
µs
µs
Unit
t
pLH
1
Switching time
dispersion between on
and off
Common mode
transient immunity at
logic high output
|t
pLH
-t
pHL
|
10000
15000
―
V / µs
-10000 -15000
―
V / µs
(Note 9): CM
L
is the maximum rate of fall of the common mode voltage that can be
sustained with the output voltage in the logic low state(V
O
< 1V).
CM
H
is the maximum rate of rise of the common mode voltage that can be
sustained with the output voltage in the logic high state(V
O
< 4V).
(Note 10): Maximum electrostatic discharge voltage for any pins: 100V(C = 200pF, R = 0).
Test Circuit 1: Switching Time Test Circuit
Pulse input
PW = 100µs
Duty ratio = 1 / 10
I
F
Monitor
51Ω
I
F
1
2
3
4
8
7
0.1µF
6
5
R
L
V
O
Output
monitor
V
CC
= 15 V
I
F
0
V
O
1.5V
15V
1.5V
V
OL
t
pLH
t
p
HL
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2003-02-19
TLP759(IGM)
Test Circuit 2: Common Mode Noise Immunity Test Circuit
V
CC
= 15 V
V
CM
R
L
V
O
Output
monitor
t
r
V
O
(I
F
= 0mA)
0.1µF
10%
t
f
15V
4V
1V
V
O
(I
F
= 10mA)
V
OL
0V
90%
1500V
I
F
1
2
3
4
8
7
6
5
V
CM
Pulse generator
Z
O
= 50Ω
1200(V)
1200(V)
CMH
=
,
CML
=
tr (
m
s)
t f (
m
s)
5
2003-02-19
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