KTK211-Y datasheet, PDF - EEWORLD Datasheet

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KTK211-Y: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size380KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTK211-Y Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN

KTK211-Y Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
Other features	LOW NOISE
Configuration	SINGLE WITH BUILT-IN DIODE
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	0.15 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.15 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

HIGH FREQUENCY APPLICATION.

VHF BAND AMPLIFIER APPLICATION.

FEATURES

・Low

Noise Figure : NF=2.5dB(Typ.) (f=100MHz).

・High

Forward Transfer Admittance.

KTK211

N CHANNEL JUNCTION FIELD

EFFECT TRANSISTOR

: |y

| =9mS(Typ.)

・Extremely

Low Reverse Transfer Capacitance.

: C

rss

=0.1pF(Typ.)

DIM

MILLIMETERS

2.93 + 0.20

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

0.1 MAX

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Gate-Drain Voltage

Gate Current

Drain Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

GDO

stg

RATING

-18

150

-55½150

UNIT

℃

1. GATE

2. DRAIN

3. SOURCE

SOT-23

Marking

DSS

Rank

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Gate Leakage Current

Gate-Drain Breakdown Voltage

Drain Current

Gate-Source Cut-off Voltage

Foward Transfer Admittance

Reverse Transfer Capacitance

Power Gain

Noise Figure

Note : I

DSS

Classification

SYMBOL

GSS

(BR)GDO

DSS

(Note)

GS(OFF)

rss

TEST CONDITION

=-0.5V, V

=-100μ

=0, V

=10V

=10V, I

=1μ

=10V, V

=0, f=1kHz

=-10V, f=1MHz

=10V, f=100MHz (Fig.)

MIN.

-18

1.0

-0.4

TYP.

0.10

2.5

MAX.

-10

-4.0

0.15

3.5

UNIT

O:1.0½3.0, Y:2.5½6.0,

GR(G):5.0½10.0, BL(B):9.0½15.0

2003. 2. 25

Revision No : 2

1/3

KTK211-Y Related Products

	KTK211-Y	KTK211-BL	KTK211-GR	KTK211-O
Description	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3 PIN
Maker	KEC	KEC	KEC	KEC
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	0.15 pF	0.15 pF	0.15 pF	0.15 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.15 W	0.15 W	0.15 W	0.15 W
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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