KTK5131E-RTK/P datasheet, PDF - EEWORLD Datasheet

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KTK5131E-RTK/P: DescriptionSmall Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ESM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size814KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTK5131E-RTK/P Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ESM, 3 PIN

KTK5131E-RTK/P Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW THRESHOLD
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	40 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

ULTRA-HIGH SPEED SWITCHING APPLICATIONS

ANALOG SWITCH APPLICATIONS

FEATURES

・2.5

Gate Drive.

・Low

Threshold Voltage : V

=0.5½1.5V.

・High

Speed.

・Small

Package.

・Enhancement-Mode.

KTK5131E

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

DC Drain Current

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

SYMBOL

GSS

stg

RATING

±20

100

150

-55½150

UNIT

℃

EQUIVALENT CIRCUIT

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Gate Leakage Current

Drain-Source Breakdown Voltage

Drain Cut-off Current

Gate Threshold Voltage

Forward Transfer Admittance

Drain-Source ON Resistance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching

Time

Turn-on Time

Turn-off Time

SYMBOL

GSS

(BR)DSS

DSS

DS(ON)

iss

rss

oss

off

=3V, I

=10mA, V

=0½2.5V

140

TEST CONDITION

=±16V, V

=0V

=100μ V

=0V

=30V, V

=0V

=3V, I

=0.1mA

=3V, I

=10mA

=10mA, V

=2.5V

=3V, V

=0V, f=1MHz

=3V, V

=0V, f=1MHz

=3V, V

=0V, f=1MHz

MIN.

0.5

TYP.

5.5

1.6

6.5

140

MAX.

±1

1.5

UNIT

Ω

2014. 3. 31

Revision No : 1

1/3

KTK5131E-RTK/P Related Products

	KTK5131E-RTK/P	KTK5131E-RTK/P-LB
Description	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ESM, 3 PIN	Small Signal Field-Effect Transistor, 0.05A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ESM, 3 PIN
Maker	KEC	KEC
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW THRESHOLD	LOW THRESHOLD
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (ID)	0.05 A	0.05 A
Maximum drain-source on-resistance	40 Ω	40 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F3	R-PDSO-F3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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