SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
A
KTB1367
TRIPLE DIFFUSED PNP TRANSISTOR
C
・Low
Collector-Emitter Saturation Voltage
: V
CE(sat)
=-2.0V(Max.).
・Complementary
to KTD2059.
・Suffix
U : Qualified to AEC-Q101.
ex) KTB1367-U/PU
E
G
B
P
FEATURES
S
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
K
L
M
D
L
R
D
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-100
-100
-5
-5
-0.5
30
150
-55½150
UNIT
V
V
V
A
A
W
℃
℃
1
N
N
MILLIMETERS
_
10.0 + 0.3
_
15.0 + 0.3
_
2.70 + 0.3
0.76+0.09/-0.05
_
Φ3.2
+ 0.2
_
3.0 + 0.3
_
12.0 + 0.3
0.5+0.1/-0.05
_
13.6 + 0.5
_
3.7 + 0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
_
2.54 + 0.1
_
6.8 + 0.1
_
4.5 + 0.2
_
2.6 + 0.2
0.5 Typ
F
J
H
2
3
Q
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
R:40½80,
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
O:70½140,
TEST CONDITION
V
CB
=-100V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-50mA, I
B
=0
V
CE
=-5V, I
C
=-1A
V
CE
=-5V, I
C
=-4A
I
C
=-4A, I
B
=-0.4A
V
CE
=-5V, I
C
=-4A
V
CE
=-5V, I
C
=-1A
V
CB
=-10V, I
E
=0, f=1MHz
Y:120½240
MIN.
-
-
-100
40
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
5.0
270
MAX.
-100
-1
-
240
-
-2.0
-1.5
-
-
V
V
MHz
pF
UNIT
μ
A
mA
V
2018. 04. 10
Revision No : 3
1/2
KTB1367
I
C
- V
CE
COLLECTOR CURRENT I
C
(A)
-5
-4
-3
-2
-1
0
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2
1
-0.5
-0.3
T
7
c=
5
C
COMMON EMITTER
I
C
/I
B
=10
-250
-200
-150
-100
-50
I
B
=-20mA
-0.1
COMMON EMITTER
Tc=25 C
0
-0.05
-0.03
-0.01
-0.03
-0.1
-0.3
Tc=25 C
Tc=-25 C
0
-1
-2
-3
-4
-5
-6
-7
-1
-3 -5
COLLECTOR EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
h
FE
- I
C
500
-20
Tc=75 C
Tc=25 C
SAFE OPERATING AREA
I
C
MAX(PULSED)
I
C
MAX
(CONTINUOUS)
10
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(A)
300
-10
-5
-3
1m
s
100
Tc=-25 C
50
30
COMMON EMITTER
V
CE
=-5V
-1
-0.5
-0.3
1s
DC
O
(T PE
c= RA
25 T
C) ION
10
-0.01
-0.03
-0.1
-0.3
-1
-3 -5
COLLECTOR CURRENT I
C
(A)
-0.1
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-3
-10
-30
-100
V
CEO
MAX.
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
ms
0m
s
-200
COLLECTOR POWER DISSIPATION P
C
(W)
Pc - Ta
50
40
30
20
10
0
Tc=Ta
INFINITE HEAT SINK
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2018. 04. 10
Revision No : 3
2/2