VDDV2CHP-2 datasheet, PDF - EEWORLD Datasheet

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VDDV2CHP-2: DescriptionSmall Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size49KB，2 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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VDDV2CHP-2 Overview

Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

VDDV2CHP-2 Parametric

Parameter Name	Attribute value
Maker	Vishay
package instruction	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	240 V
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-XUUC-N2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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VDDV2CHP-2 Related Products

	VDDV2CHP-2	VDDV1CHP	VDDV1CHP-1	VDDV1CHP-2	VDDV2CHP	VDDV2CHP-1
Description	Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Maker	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay
package instruction	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	240 V	240 V	240 V	240 V	240 V	240 V
Maximum drain-source on-resistance	10 Ω	6 Ω	6 Ω	6 Ω	10 Ω	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-XUUC-N2	S-XUUC-N2	S-XUUC-N2	S-XUUC-N2	S-XUUC-N2	S-XUUC-N2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1

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