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BAS16WS/D6

Description
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size148KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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BAS16WS/D6 Overview

Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon

BAS16WS/D6 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?incompatible
MakerVishay
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFAST SWITCHING
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Maximum non-repetitive peak forward current2 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
VISHAY
BAS16WS
Vishay Semiconductors
Small Signal Diodes
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
• Also available in case SOT-23 with designation
BAS16
Mechanical Data
Case:
SOD-323 Plastic Case
Weight:
approx. 4 mg
Marking:
A6
Packaging Codes/Options:
D5/10 K per 13" reel (8 mm tape), 30 K/box
D6/3 K per 7" reel (8 mm tape), 30 K/box
17431
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Peak reverse voltage
Forward current (continuous)
Non-repetitive peak forward current
t = 1
µs
t = 1 ms
t=1s
Power dissipation
1)
Test condition
Symbol
V
R
V
RM
I
F
I
FSM
I
FSM
I
FSM
P
tot
Value
75
100
250
2.0
1.0
0.5
200
1)
Unit
V
V
mA
A
A
A
mW
Valid provided electrodes are kept at ambient temperature
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Maximum junction temperature
Storage temperature
Test condition
Symbol
T
j
T
S
Value
150
- 65 to 150
Unit
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
Leakage current
V
R
= 25 V, T
J
= 150 °C
V
R
= 75 V
V
R
= 75 V, T
J
= 150 °C
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
I
R
Min
Typ.
Max
715
855
1.00
1.25
30
1
50
Unit
mV
mV
V
V
µA
µA
µA
Document Number 85752
Rev. 3, 24-Jun-03
www.vishay.com
1

BAS16WS/D6 Related Products

BAS16WS/D6 BAS16WS/D5
Description Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon
Is it lead-free? Lead free Lead free
Is it Rohs certified? incompatible incompatible
package instruction R-PDSO-G2 R-PDSO-G2
Contacts 2 2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features FAST SWITCHING FAST SWITCHING
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.715 V 0.715 V
JESD-30 code R-PDSO-G2 R-PDSO-G2
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 2 A 2 A
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Maximum output current 0.25 A 0.25 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.2 W 0.2 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 100 V
Maximum reverse recovery time 0.006 µs 0.006 µs
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Base Number Matches 1 1

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