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BLF6G20-230PRN

Description
Power LDMOS transistor
CategoryDiscrete semiconductor    The transistor   
File Size39KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BLF6G20-230PRN Overview

Power LDMOS transistor

BLF6G20-230PRN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionROHS COMPLIANT, CERAMIC PACKAGE-4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-CDFM-F4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BLF6G20-230PRN
Power LDMOS transistor
Rev. 01 — 2 December 2008
Objective data sheet
1. Product profile
1.1 General description
230 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
V
DS
(V)
28
P
L(AV)
(W)
50
G
p
(dB)
16.5
η
D
(%)
29.5
ACPR
(dBc)
−35
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 28 V and an I
Dq
of 2000 mA:
N
Average output power = 50 W
N
Power gain = 16.5 dB (typ)
N
Efficiency = 29.5 %
N
ACPR =
−35
dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (1800 MHz to 2000 MHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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