BUK9609-75A
N-channel TrenchMOS logic level FET
Rev. 03 — 22 September 2008
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
V
GS
= 5 V; T
j
= 25 °C; see
Figure 3;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
75
75
230
Unit
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
total power
dissipation
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 4.5 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 15
-
-
-
7.6
9.95
9
mΩ
mΩ
I
D
= 75 A; V
sup
≤
75 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
562
mJ
NXP Semiconductors
BUK9609-75A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
G
D
S
D
Description
gate
drain
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404
(D2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BUK9609-75A
D2PAK
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Version
SOT404
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
V
GSM
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
source current
peak source current
pulsed; t
p
≤
50 µs
V
GS
= 5 V; T
j
= 100 °C; see
Figure 1
V
GS
= 5 V; T
j
= 25 °C; see
Figure 3;
see
Figure 1
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-10
-
-
-
-
-55
-55
-15
Max
75
75
10
65
75
440
230
175
175
15
Unit
V
V
V
A
A
A
W
°C
°C
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
I
S
I
SM
E
DS(AL)S
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
-
-
-
75
440
562
A
A
mJ
Avalanche ruggedness
non-repetitive
I
D
= 75 A; V
sup
≤
75 V; R
GS
= 50
Ω;
V
GS
= 5 V;
drain-source avalanche T
j(init)
= 25 °C; unclamped
energy
BUK9609-75A_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 22 September 2008
2 of 12
NXP Semiconductors
BUK9609-75A
N-channel TrenchMOS logic level FET
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03na19
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
1000
ID
(A)
RDSon = VDS/ ID
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03nb44
tp = 10 us
100
100 us
1 ms
10
P
δ
=
tp
T
D.C.
10 ms
100 ms
tp
T
t
1
1
10
VDS (V)
100
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9609-75A_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 22 September 2008
3 of 12
NXP Semiconductors
BUK9609-75A
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
Typ
-
Max
0.65
Unit
K/W
thermal resistance from see
Figure 4
junction to mounting
base
thermal resistance from minimum footprint; mounted on a
junction to ambient
printed-circuit board
R
th(j-a)
-
50
-
K/W
1
Zth(j-mb)
(K/W)
03nb45
δ
= 0.05
0.2
0.1
0.1
0.05
0.02
0.01
P
δ
=
tp
T
Single Shot
tp
T
t
0.001
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9609-75A_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 22 September 2008
4 of 12
NXP Semiconductors
BUK9609-75A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C; see
Figure 6
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C; see
Figure 6
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C; see
Figure 6
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 75 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 75 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 10 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -10 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C; see
Figure 12;
see
Figure 15
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C; see
Figure 12;
see
Figure 15
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
from upper edge of drain mounting base to
centre of die; T
j
= 25 °C
from drain lead 6 mm from package to
centre of die; T
j
= 25 °C
L
S
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
from source lead to source bond pad;
T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C; see
Figure 13
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= -10 V;
V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
-
-
-
-
-
-
-
-
-
-
6631
905
610
47
185
424
226
2.5
4.5
7.5
8840
1090
840
-
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
75
70
1
0.5
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
0.05
2
2
-
-
7.23
7.6
Max
-
-
2
-
2.3
500
10
100
100
9.95
18.9
8.5
9
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
0.85
70.3
213
1.2
-
-
V
ns
nC
BUK9609-75A_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 22 September 2008
5 of 12
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