DPS1MS8MP-10C datasheet, PDF - EEWORLD Datasheet

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DPS1MS8MP-10C: DescriptionSRAM Module, 1MX8, 100ns, CMOS, CDMA32, 0.600 INCH, DIP-32; Categorystorage storage; File Size606KB，6 Pages; ManufacturerB&B Electronics Manufacturing Company

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DPS1MS8MP-10C Overview

SRAM Module, 1MX8, 100ns, CMOS, CDMA32, 0.600 INCH, DIP-32

DPS1MS8MP-10C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	MODULE
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	100 ns
Other features	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON
JESD-30 code	R-CDMA-T32
JESD-609 code	e0
memory density	8388608 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX8
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.0001 A
Minimum standby current	2 V
Maximum slew rate	0.1 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Base Number Matches	1

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1Mx8, 55 - 150ns, DIP

30A143-00

8 Megabit CMOS SRAM

DPS1MS8MP

DESCRIPTION:

The DPS1MS8MP is a 1Meg x 8 high-density,

low-power static RAM module comprised of two 512K

x 8 monolithic SRAM’s, an advanced high-speed CMOS

decoder and decoupling capacitors surface mounted on

a co-fired ceramic substrate having side-brazed leads.

The DPS1MS8MP is available in a 600-mil-wide, 32-pin

dual-in-line package that is upward compatible to the

JEDEC standard pin configuration for 4 megabit

monolithics.

The DPS1MS8MP operates from a single +5V supply

and all input and output pins are completely

TTL-compatible. The low standby power of the

DPS1MS8MP makes it ideal for battery-backed

applications.

FEATURES:

PIN NAMES

A0 - A17

I/O0 - I/O7

Address Inputs

Data In/Out

Chip Enable

Write Enable

Power (+5V)

Ground

• 1 Megabit x 8 Configurati

•

Access Times: 55*, 70, 85, 100, 120, 150ns

•

Low Power Dissipation:

300

µA

(max.) Standby (CMOS)

100 mA (max.) Operating

•

2-Volt Data Retention

•

Fully Static Operation

- No Clock or Refresh Required

•

All inputs and Outputs are TTL-Compatible

•

600 mil, 32-pin JEDEC Standard DIP Pinout

Available in Commercial only.

PIN-OUT DIAGRAM

FUNCTIONAL BLOCK DIAGRAM

30A143-00

REV. C

This document contains information on a product that is currently released

to production at Dense-Pac Microsystems, Inc. Dense-Pac reserves the

right to change products or specifications herein without prior notice.

DPS1MS8MP-10C Related Products

	DPS1MS8MP-10C	DPS1MS8MP-70C	DPS1MS8MP-85C	DPS1MS8MP-85I	DPS1MS8MP-15I	DPS1MS8MP-10I	DPS1MS8MP-12C	DPS1MS8MP-15C	DPS1MS8MP-55C
Description	SRAM Module, 1MX8, 100ns, CMOS, CDMA32, 0.600 INCH, DIP-32	SRAM Module, 1MX8, 70ns, CMOS, CDMA32, 0.600 INCH, DIP-32	SRAM Module, 1MX8, 85ns, CMOS, CDMA32, 0.600 INCH, DIP-32	SRAM Module, 1MX8, 85ns, CMOS, CDMA32, 0.600 INCH, DIP-32	SRAM Module, 1MX8, 150ns, CMOS, CDMA32, 0.600 INCH, DIP-32	SRAM Module, 1MX8, 100ns, CMOS, CDMA32, 0.600 INCH, DIP-32	SRAM Module, 1MX8, 120ns, CMOS, CDMA32, 0.600 INCH, DIP-32	SRAM Module, 1MX8, 150ns, CMOS, CDMA32, 0.600 INCH, DIP-32	SRAM Module, 1MX8, 55ns, CMOS, CDMA32, 0.600 INCH, DIP-32
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6	DIP, DIP32,.6
Contacts	32	32	32	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	100 ns	70 ns	85 ns	85 ns	150 ns	100 ns	120 ns	150 ns	55 ns
Other features	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS	LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-CDMA-T32	R-CDMA-T32	R-CDMA-T32	R-CDMA-T32	R-CDMA-T32	R-CDMA-T32	R-CDMA-T32	R-CDMA-T32	R-CDMA-T32
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32	32	32
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	85 °C	85 °C	85 °C	70 °C	70 °C	70 °C
organize	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	NO	NO	NO	NO	NO	NO	NO	NO	NO
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.0001 A	0.0001 A	0.0001 A	0.000135 A	0.000135 A	0.000135 A	0.0001 A	0.0001 A	0.0001 A
Minimum standby current	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Maximum slew rate	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	1	-	-	-	-
Maker	-	B&B Electronics Manufacturing Company	-	B&B Electronics Manufacturing Company	B&B Electronics Manufacturing Company	B&B Electronics Manufacturing Company	B&B Electronics Manufacturing Company	B&B Electronics Manufacturing Company	B&B Electronics Manufacturing Company

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