BC817, BC818
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
0.079 (2.0)
Mounting Pad Layout
0.031 (0.8)
Top View
0.035 (0.9)
1
2
max. .004 (0.1)
Pin Configuration
1 = Base
2 = Emitter
3 = Collector
0.037 (0.95)
0.037 (0.95)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
Type
.045 (1.15)
.037 (0.95)
Marking
6A
6B
6C
6E
6F
6G
BC817-16
-25
-40
BC818-16
-25
-40
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Features
• NPN Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
-16, -25, and -40 according to their current gain.
• As complementary types, the PNP transistors
BC807 and BC808 are recommended.
(T
A
= 25°C unless otherwise noted)
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
SB
= 50 ˚C
Thermal Resistance Junction to Ambiant Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
Note:
(1) Device on fiberglass substrate, see layout on third page.
(base shorted)
Symbol
BC817
BC818
BC817
BC818
V
CES
V
CEO
V
EBO
I
C
I
CM
I
BM
–I
EM
P
tot
R
θJA
R
θSB
T
j
T
S
Value
50
30
45
25
5
800
1000
200
1000
310
(1)
450
(1)
320
(1)
150
–65 to +150
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C/W
°C
°C
(base open)
Document Number 88163
09-May-02
www.vishay.com
1
BC817, BC818
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
DC Current Gain
Current Gain Group-16
-25
-40
J
= 25°C unless otherwise noted)
Symbol
h
FE
Test Condition
V
CE
= 1V, I
C
= 100mA
Min
100
160
250
40
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
1.2
—
—
—
100
12
Max
250
400
600
—
0.7
1.3
V
100
5
100
—
—
Unit
—
—
—
—
V
V
h
FE
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter VoltageV
BEon
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Gain-Bandwidth Product
Collector-Base Capacitance
Note:
(1) Device on fiberglass substrate, see layout below.
V
CE
= 1V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
—
V
CEsat
V
BEsat
V
CE
= 1V, I
C
= 500mA
I
CBO
I
EBO
f
T
C
CBO
V
CB
= 20V
V
CB
= 20V, T
J
= 150°C
V
EB
= 4V
V
CE
= 5V, I
C
= 10mA
f = 50MHz
V
CB
= 10V, f = 1MHz
nA
µA
nA
MHz
pF
0.30 (7.5)
Layout for R
θJA
test
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
0.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.47 (12)
0.03 (0.8)
Dimensions in inches (millimeters)
0.2 (5)
0.06 (1.5)
0.20 (5.1)
www.vishay.com
2
Document Number 88163
09-May-02
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
