EEWORLDEEWORLDEEWORLD

Part Number

Search

PSMN6R0-30YL

Description
N-channel TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size165KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PSMN6R0-30YL Overview

N-channel TrenchMOS logic level FET

PSMN6R0-30YL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC, LFPAK-4
Contacts235
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)26 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)73 A
Maximum drain current (ID)79 A
Maximum drain-source on-resistance0.00787 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)55 W
Maximum pulsed drain current (IDM)292 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PSMN6R0-30YL
N-channel TrenchMOS logic level FET
Rev. 01 — 10 September 2008
Preliminary data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
30
73
55
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
150 °C
drain current
total power
dissipation
gate-drain charge
Symbol Parameter
Dynamic characteristics
Q
GD
V
GS
= 4.5 V; I
D
= 10 A;
V
DS
= 12 V; see
Figure 14;
see
Figure 15
V
GS
= 10 V; I
D
= 15 A;
T
j
= 25 °C; see
Figure 12
-
3.08
-
nC
Static characteristics
R
DSon
drain-source
on-state resistance
-
4.8
6
mΩ
Oops, failed to create event in NDIS
I call NdisInitUnicodeString(&MsgEventString,KE_EVENT_NAME); g_KeMsgEvet = IoCreateNotificationEvent(&MsgEventString,&hMsgEvent); if( g_KeMsgEvet == NULL ) { DBGPRINT(("EVENT NULL")); } else KeResetEv...
ykyyky Embedded System
Electronic components, I use my appearance to speak for myself
[i=s] This post was last edited by Xin Xin on 2015-9-25 16:36 [/i][align=left][size=5] This is a computer motherboard. When I first saw it many years ago, I felt that it was a metropolis built with el...
辛昕 Talking
Four-axis high-speed pulse motion controller software and hardware technical information
Four-axis high-speed pulse motion controller software and hardware technical information This controller consists of two parts: The PLC function has 22 input points and 20 output points. 1: Four-axis ...
q2512262471 TI Technology Forum
Build your own AVR emulator
Build your own AVR emulator...
maker Microchip MCU
DC2008-09 installation problem?
11:34:02 (snpslmd) Checking the integrity of the license file.... 11:34:02 (snpslmd) Valid SSS feature found. 11:34:02 (snpslmd) The feature is needed to enable the other keys in your license file. 11...
eeleader-mcu FPGA/CPLD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2525  2160  2421  1095  1567  51  44  49  23  32 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号