PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 30 October 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
The devices may also be used for unidirectional ESD protection of up to two signal lines.
Table 1.
Product overview
Package
NXP
PESD5V0X1BQ
PESD5V0X1BT
SOT663
SOT23
JEDEC
-
TO-236AB
ultra small and flat lead
very small
Package configuration
Type number
1.2 Features
I
Bidirectional ESD protection of one line
I
ESD protection up to 9 kV
I
Unidirectional ESD protection of up to
I
IEC 61000-4-2; level 4 (ESD)
two lines
I
Ultra low diode capacitance: C
d
= 0.9 pF
I
AEC-Q101 qualified
I
Very low leakage current: I
RM
= 1 nA
1.3 Applications
I
USB interfaces
I
I
I
I
I
Antenna protection
Radio Frequency (RF) protection
10/100/1000 Mbit/s Ethernet
FireWire
Asymmetric Digital Subscriber Line
(ADSL)
I
High-speed data lines
I
Subscriber Identity Module (SIM) card
protection
I
Computers, peripherals and printers
I
Cellular handsets and accessories
I
Portable electronics
I
Communication systems
I
Audio and video equipment
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
C
d
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
[1]
[2]
Parameter
Conditions
Min
-
-
-
Typ
-
0.9
2
Max
5
1.3
2.6
Unit
V
pF
pF
[1]
[2]
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
cathode (diode 1)
cathode (diode 2)
common anode
3
3
Simplified outline
Graphic symbol
PESD5V0X1BQ
1
2
1
2
006aaa154
PESD5V0X1BT
1
2
3
cathode (diode 1)
cathode (diode 2)
common anode
1
2
3
3
1
2
006aaa154
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD5V0X1BQ
PESD5V0X1BT
-
-
Description
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
Version
SOT663
SOT23
Type number
PESD5V0X1BQ_PESD5V0X1BT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
2 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
4. Marking
Table 5.
Marking codes
Marking code
[1]
E6
U3*
Type number
PESD5V0X1BQ
PESD5V0X1BT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
-
−55
−65
150
+150
+150
°C
°C
°C
Parameter
Conditions
Min
Max
Unit
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[1]
Parameter
Conditions
Min
-
-
Max
9
10
Unit
kV
kV
Table 8.
Standard
Per diode
ESD standards compliance
Conditions
> 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESD5V0X1BQ_PESD5V0X1BT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
3 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
001aaa631
I
PP
100 %
90 %
10 %
t
r
=
0.7 ns to 1 ns
30 ns
60 ns
t
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
6. Characteristics
Table 9.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per diode
V
RWM
I
RM
V
BR
C
d
reverse standoff
voltage
reverse leakage current V
RWM
= 5 V
breakdown voltage
diode capacitance
I
R
= 5 mA
f = 1 MHz
V
R
= 0 V
V
R
= 5 V
r
dif
[1]
[2]
[1]
[2]
[1]
[2]
Conditions
Min
-
-
5.8
-
-
-
-
-
Typ
-
1
7.5
0.9
2
0.8
1.7
-
Max
5
100
9.5
1.3
2.6
1.2
2.3
100
Unit
V
nA
V
pF
pF
pF
pF
Ω
differential resistance
I
R
= 1 mA
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
PESD5V0X1BQ_PESD5V0X1BT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
4 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
1.0
Cd
(pF)
0.96
006aab249
2.0
C
d
(pF)
1.9
006aab348
0.92
1.8
0.88
1.7
0.84
0.80
0
1
2
3
4
VR (V)
5
1.6
0
1
2
3
4
V
R
(V)
5
bidirectional configuration
f = 1 MHz; T
amb
= 25
°C
unidirectional configuration
f = 1 MHz; T
amb
= 25
°C
Fig 2.
Diode capacitance as a function of reverse
voltage; typical values
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
I
I
PP
−V
CL
−V
BR
−V
RWM
I
RM
I
R
−I
RM
−I
R
V
RWM
V
BR
V
CL
−V
CL
−V
BR
−V
RWM
−I
RM
−I
R
−
−
P-N
+
V
+
−I
PP
006aaa676
−I
PP
006aaa407
Fig 4.
V-I characteristics for a bidirectional
ESD protection diode
Fig 5.
V-I characteristics for a unidirectional
ESD protection diode
PESD5V0X1BQ_PESD5V0X1BT_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
5 of 13
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