PSMN9R0-30YL datasheet, PDF - EEWORLD Datasheet

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PSMN9R0-30YL: DescriptionN-channel TrenchMOS logic level FET; CategoryDiscrete semiconductor The transistor; File Size168KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PSMN9R0-30YL Overview

N-channel TrenchMOS logic level FET

PSMN9R0-30YL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	PLASTIC, LFPAK-4
Contacts	235
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	16 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	55 A
Maximum drain current (ID)	61 A
Maximum drain-source on-resistance	0.01103 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-235
JESD-30 code	R-PSSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	46 W
Maximum pulsed drain current (IDM)	223 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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PSMN9R0-30YL

N-channel TrenchMOS logic level FET

Rev. 01 — 10 September 2008

Preliminary data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

industrial and communications applications.

1.2 Features and benefits

High efficiency due to low switching

and conduction losses

Suitable for logic level gate drive

sources

1.3 Applications

Class-D amplifiers

DC-to-DC converters

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

tot

Quick reference

Conditions

= 25 °C; V

= 10 V;

see

Figure 1;

see

Figure 3

= 25 °C; see

Figure 2

Min

Typ

Max

Unit

drain-source voltage T

≥

25 °C; T

≤

150 °C

drain current

total power

dissipation

gate-drain charge

Symbol Parameter

Dynamic characteristics

= 4.5 V; I

= 10 A;

= 12 V; see

Figure 14;

see

Figure 15

= 10 V; I

= 15 A;

= 25 °C; see

Figure 12

2.4

Static characteristics

DSon

drain-source

on-state resistance

6.07

8.5

mΩ

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