PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
Rev. 07 — 24 September 2008
Product data sheet
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET).
Table 1.
Product overview
Package
NXP
PEMD2
PIMD2
PUMD2
SOT666
SOT457
SOT363
JEITA
-
SC-74
SC-88
PNP/PNP
complement
PEMB1
-
PUMB1
NPN/NPN
complement
PEMH1
-
PUMH1
Type number
1.2 Features
I
I
I
I
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
1.3 Applications
I
Low current peripheral driver
I
Control of IC inputs
I
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
15.4
0.8
Typ
-
-
22
1
Max
50
100
28.6
1.2
Unit
V
mA
kΩ
NXP Semiconductors
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
001aab555
TR1
R2
R1
R1
R2
TR2
Simplified outline
Graphic symbol
PEMD2; PUMD2
6
5
4
6
5
4
1
2
3
006aaa143
PIMD2
1
2
3
4
5
6
GND (emitter) TR2
input (base) TR2
output (collector) TR1
GND (emitter) TR1
input (base) TR1
output (collector) TR2
1
1
2
3
TR2
R2
R1
6
5
4
6
5
4
R1
R2
TR1
2
3
006aab235
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMD2
PIMD2
PUMD2
-
SC-74
SC-88
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package (TSOP6); 6 leads
plastic surface-mounted package; 6 leads
Version
SOT666
SOT457
SOT363
Type number
PEMD2_PIMD2_PUMD2_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 24 September 2008
2 of 16
NXP Semiconductors
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
4. Marking
Table 5.
PEMD2
PIMD2
PUMD2
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
D4
M5
D*2
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current
peak collector current
total power dissipation
PEMD2 (SOT666)
PIMD2 (SOT457)
PUMD2 (SOT363)
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
-
-
Max
50
50
10
+40
−10
+10
−40
100
100
Unit
V
V
V
V
V
V
V
mA
mA
Per transistor; for the PNP transistor with negative polarity
-
-
-
-
−65
−65
200
300
200
150
+150
+150
mW
mW
mW
°C
°C
°C
PEMD2_PIMD2_PUMD2_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 24 September 2008
3 of 16
NXP Semiconductors
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
total power dissipation
PEMD2 (SOT666)
PIMD2 (SOT457)
PUMD2 (SOT363)
[1]
[2]
Parameter
Conditions
T
amb
≤
25
°C
[1]
[2]
Min
Max
Unit
-
-
-
300
600
300
mW
mW
mW
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PEMD2 (SOT666)
PIMD2 (SOT457)
PUMD2 (SOT363)
Per device
R
th(j-a)
thermal resistance from
junction to ambient
PEMD2 (SOT666)
PIMD2 (SOT457)
PUMD2 (SOT363)
[1]
[2]
Conditions
in free air
[1]
Min
Typ
Max
Unit
Per transistor
[2]
-
-
-
-
-
-
625
417
625
K/W
K/W
K/W
in free air
[1]
[2]
-
-
-
-
-
-
416
208
416
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PEMD2_PIMD2_PUMD2_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 24 September 2008
4 of 16
NXP Semiconductors
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
Parameter
Conditions
Min
-
-
-
-
60
-
-
2.5
15.4
0.8
Typ
-
-
-
-
-
-
1.1
1.7
22
1
Max
100
1
50
180
-
150
0.8
-
28.6
1.2
mV
V
V
kΩ
Unit
nA
µA
µA
µA
Per transistor; for the PNP transistor with negative polarity
collector-base cut-off V
CB
= 50 V; I
E
= 0 A
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input
voltage
on-state input
voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
TR1 (NPN)
TR2 (PNP)
-
-
-
-
2.5
3
pF
pF
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
V
CE
= 5 V; I
C
= 100
µA
V
CE
= 0.3 V; I
C
= 5 mA
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
PEMD2_PIMD2_PUMD2_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 24 September 2008
5 of 16
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