PRTR5V0U1T
Ultra low capacitance single rail-to-rail ESD protection
Rev. 01 — 25 September 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance single rail-to-rail ElectroStatic Discharge (ESD) protection device in
a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to
protect one Hi-Speed data line or high-frequency signal line from the damage caused by
ESD and other transients.
PRTR5V0U1T incorporates one ultra low capacitance rail-to-rail protection channel as
well as an additional ESD protection diode to ensure signal line protection even if no
supply voltage is available.
1.2 Features
I
I
I
I
I
I
I
ESD protection of one Hi-Speed data line or high-frequency signal line
Ultra low input/output to ground capacitance: C
(I/O-GND)
= 1 pF
ESD protection up to 8 kV
IEC 61000-4-2, level 4 (ESD)
Very low clamping voltage due to an integrated additional ESD protection diode
Very low reverse current
Small SMD plastic package
1.3 Applications
I
I
I
I
I
I
I
USB interfaces (2.0)
Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces
Mobile and cordless phones
Personal Digital Assistants (PDA)
Digital cameras
Wide Area Network (WAN) / Local Area Network (LAN) systems
PCs, notebooks, printers and other PC peripherals
NXP Semiconductors
PRTR5V0U1T
Ultra low capacitance single rail-to-rail ESD protection
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per channel
C
(I/O-GND)
Zener diode
V
RWM
C
sup
[1]
[2]
Parameter
input/output to ground
capacitance
reverse standoff voltage
supply pin to ground
capacitance
Conditions
f = 1 MHz;
V
(I/O-GND)
= 0 V
[1]
Min
-
Typ
1
Max
1.5
Unit
pF
-
f = 1 MHz;
V
CC
= 0 V
[2]
-
16
5.5
-
V
pF
-
Measured from pin 1 to ground.
Measured from pin 2 to ground.
2. Pinning information
Table 2.
Pin
1
2
3
I/O
V
CC
GND
Pinning
Description
input/output
supply voltage
ground
1
2
3
3
Symbol
Simplified outline
Graphic symbol
1
2
006aab111
3. Ordering information
Table 3.
Ordering information
Package
Name
PRTR5V0U1T
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
ZN*
Type number
PRTR5V0U1T
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PRTR5V0U1T_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 September 2008
2 of 11
NXP Semiconductors
PRTR5V0U1T
Ultra low capacitance single rail-to-rail ESD protection
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
amb
T
stg
ambient temperature
storage temperature
−40
−55
+85
+125
°C
°C
Parameter
Conditions
Min
Max
Unit
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
IEC 61000-4-2; level 4
(contact discharge)
MIL-STD-883 (human
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 2 or 3.
Conditions
[1][2]
Min
Max
Unit
Per channel
-
-
8
10
kV
kV
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 8 kV (contact)
IEC 61000-4-2; level 4 (ESD)
001aaa631
I
PP
100 %
90 %
10 %
t
r
=
0.7 ns to 1 ns
30 ns
60 ns
t
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
PRTR5V0U1T_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 September 2008
3 of 11
NXP Semiconductors
PRTR5V0U1T
Ultra low capacitance single rail-to-rail ESD protection
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per channel
I
R
C
(I/O-GND)
V
F
Zener diode
V
RWM
V
BR
C
sup
[1]
[2]
Parameter
reverse current
input/output to ground
capacitance
forward voltage
reverse standoff voltage
breakdown voltage
supply pin to ground
capacitance
Conditions
V
R
= 3 V
f = 1 MHz;
V
(I/O-GND)
= 0 V
[1]
[1]
Min
-
-
-
-
[2]
Typ
<1
1
0.7
-
-
16
Max
100
1.5
-
5.5
9
-
Unit
nA
pF
V
V
V
pF
6
-
f = 1 MHz;
V
CC
= 0 V
[2]
Measured from pin 1 to ground.
Measured from pin 2 to ground.
2.0
C
(I/O-GND)
(pF)
1.6
006aaa483
1.2
0.8
0.4
0
0
1
2
3
4
5
V
(I/O-GND)
(V)
f = 1 MHz; T
amb
= 25
°C
Fig 2.
Input/output to ground capacitance as a function of input/output to ground
voltage; typical values
PRTR5V0U1T_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 September 2008
4 of 11
NXP Semiconductors
PRTR5V0U1T
Ultra low capacitance single rail-to-rail ESD protection
ESD TESTER
R
Z
C
Z
450
Ω
RG 223/U
50
Ω
coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50
Ω
IEC 61000-4-2 network
C
Z
= 150 pF; R
Z
= 330
Ω
DUT
Device
Under
Test
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped
−1
kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped
−1
kV ESD voltage waveform
(IEC 61000-4-2 network)
006aab112
Fig 3.
ESD clamping test setup and waveforms
PRTR5V0U1T_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 25 September 2008
5 of 11
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