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PSMN2R5-30YL

Description
N-channel TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size170KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PSMN2R5-30YL Overview

N-channel TrenchMOS logic level FET

PSMN2R5-30YL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC, LFPAK-4
Contacts235
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)103 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.00316 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)580 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PSMN2R5-30YL
N-channel TrenchMOS logic level FET
Rev. 01 — 10 September 2008
Preliminary data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1;
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max
30
100
88
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
150 °C
drain current
total power
dissipation
gate-drain charge
Symbol Parameter
Dynamic characteristics
Q
GD
V
GS
= 4.5 V; I
D
= 10 A;
V
DS
= 12 V; see
Figure 14;
see
Figure 15
V
GS
= 10 V; I
D
= 15 A;
T
j
= 25 °C; see
Figure 12
-
6.5
-
nC
Static characteristics
R
DSon
drain-source
on-state resistance
-
1.75
2.4
mΩ
[1]
Continuous current is limited by package.
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