AT29BV040A-20TU datasheet, PDF

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AT29BV040A-20TU: Description4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory; Categorystorage storage; File Size285KB，16 Pages; ManufacturerAtmel (Microchip); Environmental Compliance

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AT29BV040A-20TU Overview

4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

AT29BV040A-20TU Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Atmel (Microchip)
Parts packaging code	TSOP1
package instruction	8 X 20 MM, GREEN, PLASTIC, MO-142BD, TSOP1-32
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	200 ns
startup block	BOTTOM/TOP
command user interface	NO
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	R-PDSO-G32
JESD-609 code	e3
length	18.4 mm
memory density	4194304 bit
Memory IC Type	FLASH
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of departments/size	2K
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size	256 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Department size	256
Maximum standby current	0.00005 A
Maximum slew rate	0.015 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
switch bit	YES
type	NOR TYPE
width	8 mm
Maximum write cycle time (tWC)	20 ms
Base Number Matches	1

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Features

•

Single Supply Voltage, Range 2.7V to 3.6V

Single Supply for Read and Write

Software Protected Programming

Fast Read Access Time – 200 ns

Low Power Dissipation

– 15 mA Active Current

– 50 µA CMOS Standby Current

Sector Program Operation

– Single Cycle Reprogram (Erase and Program)

– 2048 Sectors (256 Bytes/Sector)

– Internal Address and Data Latches for 256 Bytes

Two 16K Bytes Boot Blocks with Lockout

Fast Sector Program Cycle Time – 20 ms Max.

Internal Program Control and Timer

DATA Polling for End of Program Detection

Minimum Endurance 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

Green (Pb/Halide-free) Packaging Option

•

4-megabit

(512K x 8)

Single 2.7-volt

Battery-Voltage

Flash Memory

AT29BV040A

1. Description

The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times to 200 ns, and a low 54 mW power dissipation. When

the device is deselected, the CMOS standby current is less than 50 µA. The device

endurance is such that any sector can be written to in excess of 10,000 times. The

programming algorithm is compatible with other devices in Atmel’s 2.7-volt-only Flash

memories.

To allow for simple in-system reprogrammability, the AT29BV040A does not require

high input voltages for programming. The device can be operated with a single 2.7V to

3.6V supply. Reading data out of the device is similar to reading from an EPROM.

Reprogramming the AT29BV040A is performed on a sector basis; 256 bytes of data

are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 256 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

0383J–FLASH–9/08

AT29BV040A

3. Block Diagram

4. Device Operation

4.1

Read

The AT29BV040A is accessed like an EPROM. When CE and OE are low and WE is high, the

data stored at the memory location determined by the address pins is asserted on the outputs.

The outputs are put in the high impedance state whenever CE or OE is high. This dual-line con-

trol gives designers flexibility in preventing bus contention.

4.2

Software Data Protection Programming

The AT29BV040 has 2048 individual sectors, each 256 bytes. Using the software data protec-

tion feature, byte loads are used to enter the 256 bytes of a sector to be programmed. The

AT29BV040A can only be programmed or reprogrammed using the software data protection

feature. The device is programmed on a sector basis. If a byte of data within the sector is to be

changed, data for the entire 256-byte sector must be loaded into the device. The AT29BV040A

automatically does a sector erase prior to loading the data into the sector. An erase command is

not required.

Software data protection protects the device from inadvertent programming. A series of three

program commands to specific addresses with specific data must be presented to the device

before programming may occur. The same three program commands must begin each program

operation. All software program commands must obey the sector program timing specifications.

Power transitions will not reset the software data protection feature, however the software fea-

ture will guard against inadvertent program cycles during power transitions.

Any attempt to write to the device without the 3-byte command sequence will start the internal

write timers. No data will be written to the device; however, for the duration of t

, a read opera-

tion will effectively be a polling operation.

After the software data protection’s 3-byte command code is given, a byte load is performed by

applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The

address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by

the first rising edge of CE or WE.

The 256 bytes of data must be loaded into each sector. Any byte that is not loaded during the

programming of its sector will be indeterminate. Once the bytes of a sector are loaded into the

device, they are simultaneously programmed during the internal programming period. After the

0383J–FLASH–9/08

first data byte has been loaded into the device, successive bytes are entered in the same man-

ner. Each new byte to be programmed must have its high-to-low transition on WE (or CE) within

150 µs of the low-to-high transition of WE (or CE) of the preceding byte. If a high-to-low transi-

tion is not detected within 150 µs of the last low-to-high transition, the load period will end and

the internal programming period will start. A8 to A18 specify the sector address. The sector

address must be valid during each high-to-low transition of WE (or CE). A0 to A7 specify the

byte address within the sector. The bytes may be loaded in any order; sequential loading is not

required.

4.3

Hardware Data Protection

Hardware features protect against inadvertent programs to the AT29BV040A in the following

ways: (a) V

sense – if V

is below 1.8V (typical), the program function is inhibited; (b) V

power on delay – once V

has reached the V

sense level, the device will automatically time

out 10 ms (typical) before programming; (c) Program inhibit – holding any one of OE low, CE

high or WE high inhibits program cycles; and (d) Noise filter – pulses of less than 15 ns (typical)

on the WE or CE inputs will not initiate a program cycle.

4.4

Input Levels

While operating with a 2.7V to 3.6V power supply, the address inputs and control inputs

(OE,

and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device.

The I/O lines can only be driven from 0 to V

+ 0.6V.

4.5

Product Identification

The product identification mode identifies the device and manufacturer as Atmel

. It may be

accessed by hardware or software operation. The hardware operation mode can be used by an

external programmer to identify the correct programming algorithm for the Atmel product.

In addition, users may wish to use the software product identification mode to identify the part

(i.e. using the device code), and have the system software use the appropriate sector size for

program operations. In this manner, the user can have a common board design for 256K to

4-megabit densities and, with each density’s sector size in a memory map, have the system soft-

ware apply the appropriate sector size.

For details, see Operating Modes (for hardware operation) or Software Product Identification.

The manufacturer and device code is the same for both modes.

4.6

DATA Polling

The AT29BV040A features DATA polling to indicate the end of a program cycle. During a pro-

gram cycle an attempted read of the last byte loaded will result in the complement of the loaded

data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and

the next cycle may begin. DATA polling may begin at any time during the program cycle.

4.7

Toggle Bit

In addition to DATA polling the AT29BV040A provides another method for determining the end

of a program or erase cycle. During a program or erase operation, successive attempts to read

data from the device will result in I/O6 toggling between one and zero. Once the program cycle

has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may

begin at any time during a program cycle.

AT29BV040A

0383J–FLASH–9/08

AT29BV040A

4.8

Optional Chip Erase Modes

The entire device may be erased by using a 6-byte software code. Please see Software Chip

Erase application note for details.

4.9

Boot Block Programming Lockout

The AT29BV040A has two designated memory blocks that have a programming lockout feature.

This feature prevents programming of data in the designated block once the feature has been

enabled. Each of these blocks consists of 16K bytes; the programming lockout feature can be

set independently for either block. While the lockout feature does not have to be activated, it can

be activated for either or both blocks.

These two 16K memory sections are referred to as

boot blocks.

Secure code which will bring up

a system can be contained in a boot block. The AT29BV040A blocks are located in the first 16K

bytes of memory and the last 16K bytes of memory. The boot block programming lockout feature

can therefore support systems that boot from the lower addresses of memory or the higher

addresses. Once the programming lockout feature has been activated, the data in that block can

no longer be erased or programmed; data in other memory locations can still be changed

through the regular programming methods. To activate the lockout feature, a series of seven

program commands to specific addresses with specific data must be performed. Please see

Boot Block Lockout Feature Enable Algorithm.

If the boot block lockout feature has been activated on either block, the chip erase function will

be disabled.

4.9.1

Boot Block Lockout Detection

A software method is available to determine whether programming of either boot block section is

locked out. See Software Product Identification Entry and Exit sections. When the device is in

the software product identification mode, a read from location 00002H will show if programming

the lower address boot block is locked out while reading location 7FFF2H will do so for the upper

boot block. If the data is FE, the corresponding block can be programmed; if the data is FF, the

program lockout feature has been activated and the corresponding block cannot be pro-

grammed. The software product identification exit mode should be used to return to standard

operation.

5. Absolute Maximum Ratings*

Temperature Under Bias............................... -55° C to +125° C

Storage Temperature .................................... -65° C to +150° C

All Input Voltages (including NC Pins)

with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages

with Respect to Ground .............................-0.6V to V

+ 0.6V

Voltage on A9 (including NC Pins)

with Respect to Ground ...................................-0.6V to +13.5V

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect

device reliability.

0383J–FLASH–9/08

AT29BV040A-20TU Related Products

	AT29BV040A-20TU	AT29BV040A_08	AT29BV040A
Description	4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory	4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory	4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

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