|
3FF30 |
3FF40 |
3FF50 |
3FF60 |
| Description |
1 A, 300 V, SILICON, SIGNAL DIODE |
1 A, 400 V, SILICON, SIGNAL DIODE |
1 A, 300 V, SILICON, SIGNAL DIODE |
1 A, 600 V, SILICON, SIGNAL DIODE |
| Maker |
SEMTECH |
SEMTECH |
SEMTECH |
SEMTECH |
| package instruction |
HERMETIC SEALED, G63, 2 PIN |
E-XALF-W2 |
HERMETIC SEALED, G63, 2 PIN |
HERMETIC SEALED, G63, 2 PIN |
| Contacts |
2 |
2 |
2 |
2 |
| Reach Compliance Code |
unknown |
unknown |
unknow |
unknown |
| ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
| Shell connection |
ISOLATED |
ISOLATED |
ISOLATED |
ISOLATED |
| Configuration |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
| Diode component materials |
SILICON |
SILICON |
SILICON |
SILICON |
| Diode type |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
| Maximum forward voltage (VF) |
1.4 V |
1.4 V |
1.4 V |
1.4 V |
| JESD-30 code |
E-XALF-W2 |
E-XALF-W2 |
E-XALF-W2 |
E-XALF-W2 |
| Maximum non-repetitive peak forward current |
70 A |
70 A |
70 A |
70 A |
| Number of components |
1 |
1 |
1 |
1 |
| Number of terminals |
2 |
2 |
2 |
2 |
| Maximum operating temperature |
150 °C |
150 °C |
150 °C |
150 °C |
| Minimum operating temperature |
-65 °C |
-65 °C |
-65 °C |
-65 °C |
| Maximum output current |
1 A |
1 A |
1 A |
1 A |
| Package body material |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
UNSPECIFIED |
| Package shape |
ELLIPTICAL |
ELLIPTICAL |
ELLIPTICAL |
ELLIPTICAL |
| Package form |
LONG FORM |
LONG FORM |
LONG FORM |
LONG FORM |
| Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
| Maximum repetitive peak reverse voltage |
300 V |
400 V |
500 V |
600 V |
| Maximum reverse recovery time |
0.05 µs |
0.05 µs |
0.05 µs |
0.05 µs |
| surface mount |
NO |
NO |
NO |
NO |
| Terminal form |
WIRE |
WIRE |
WIRE |
WIRE |
| Terminal location |
AXIAL |
AXIAL |
AXIAL |
AXIAL |
| Base Number Matches |
1 |
1 |
1 |
1 |