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KMM366S924BTS-GL

Description
Synchronous DRAM Module, 8MX64, 6ns, CMOS
Categorystorage    storage   
File Size135KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KMM366S924BTS-GL Overview

Synchronous DRAM Module, 8MX64, 6ns, CMOS

KMM366S924BTS-GL Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N168
memory density536870912 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX64
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
Base Number Matches1
KMM366S924BTS
Revision History
Revision 0.0 (July 5, 1999)
PC100 Unbuffered DIMM
• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.
• Skip ICC4 value of CL=2 in DC characteristics in datasheet.
• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.
• Symbol Change Notice
I
IL
I
IL
I
OL
Before
Input leakage current (inputs)
Input leakage current (I/O pins)
Output open @ DC characteristic table
I
LI
Io
After
Input leakage current
Output open @ DC characteristic table
Test Condition in
DC CHARACTERISTIC Change Notice
Symbol
I
CC2P ,
I
CC3P
I
CC2N ,
I
CC3N
I
CC4
Before
CKE
V
IL
(max), t
CC
= 15ns
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
2 Banks activated
After
CKE
V
IL
(max), t
CC
= 10ns
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
4 Banks activated
• Added Notes @OPERATING AC PARAMETER
Notes : 5. For -8/H/L, tRDL=1CLK and tDAL=1CLK+20ns is also supported .
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.
Rev. 0.0 July 1999

KMM366S924BTS-GL Related Products

KMM366S924BTS-GL KMM366S924BTS-G8 KMM366S924BTS-GH
Description Synchronous DRAM Module, 8MX64, 6ns, CMOS Synchronous DRAM Module, 8MX64, 6ns, CMOS Synchronous DRAM Module, 8MX64, 6ns, CMOS
Reach Compliance Code unknown unknown unknow
ECCN code EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns 6 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 536870912 bit 536870912 bit 536870912 bi
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 64 64 64
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 168 168 168
word count 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 8MX64 8MX64 8MX64
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified Not Qualified
self refresh YES YES YES
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL
Maker - SAMSUNG SAMSUNG
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