K6F1016V3M, K6F1016S3M, K6F1016R3M Family
Document Title
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
0.1
Initial draft
Revise
- Erase 100ns part from KM616FS1000 Family
- Add 150ns part on KM616FS1000 Family
- Add 32-sTSOP1 new package
- Add high power version
I
SB1
=5.0µA(Max)
- Change V
DR
(Min) 1.0 to 1.5V
Finalize
- Concept change high power version to low low power version
I
SB1
=5.0µA(Max)
- Change super low power version with special handling
I
SB1
=1.0µA(Max)
- Reduce Icc & Icc1
Read : 15mA to 10mA
Write : 25mA to 20mA
Revise
- Change datasheet format
- Erase reverse type package
Revise
- Add 48-µBGA type package
Draft Date
March 15, 1996
June 3, 1996
Remark
Advance
Preliminary
1.0
December 1, 1996
Final
2.0
February 26, 1998
Final
3.0
May 3, 1999
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 3.0
May 1999
K6F1016V3M, K6F1016S3M, K6F1016R3M Family
FEATURES
•
Process Technology: Full CMOS
•
Organization: 64Kx16 bit
•
Power Supply Voltage
K6F1016V3M Family: 3.0V~3.6V
K6F1016S3M Family: 2.3V~3.3V
K6F1016R3M Family: 1.8V~2.7V
•
Low Data Retention Voltage: 1.5V(Min)
•
Three state output status and TTL Compatible
•
Package Type: 44-TSOP2-400F, 48-µBGA-6.00x8.00
CMOS SRAM
64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The K6F1016V3M, K6F1016S3M and K6F1016R3M fami-
lies are fabricated by SAMSUNG′s advanced Full CMOS
process technology. The families support various operating
temperature ranges for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
K6F1016V3M-C
K6F1016S3M-C
K6F1016R3M-C
K6F1016V3M-I
K6F1016S3M-I
K6F1016R3M-I
Industrial(-40~85°C)
Commercial(0~70°C)
Operating Temperature
Vcc Range
3.0~3.6V
2.3~3.3V
1.8~2.7V
3.0~3.6V
2.3~3.3V
1.8~2.7V
Speed(ns)
70
1)
/85@V
CC
=3.3±0.3V
70
1)
/85@V
CC
=3.0±0.3V
120
1)
/150@V
CC
=2.5±0.2V
300
1)
@V
CC
=2.0±0.2V
70
1)
/85@V
CC
=3.3±0.3V
70
1)
/85@V
CC
=3.0±0.3V
120
1)
/150@V
CC
=2.5±0.2V
300
1)
@V
CC
=2.0±0.2V
5µA
2)
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
80mA
80mA
50mA
20mA
80mA
80mA
50mA
20mA
44-TSOP2
Forward
48-µBGA
3)
44-TSOP2
Forward
PKG Type
1. The parameter is measured with 30pF test load.
2. Super low power product=1µA with special handling.
3. Availiable parts are 100ns@V
CC
=3.0±0.3V, 150ns@V
CC
=2.5±0.2V and 300ns@V
CC
=2.0±0.2V with 30pF test load.
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
A
OE
UB
B
LB
I/O16
I/O15
C
I/O14
I/O13
Vss
D
Vcc
I/O12
E
I/O11
I/O10
I/O9
F
N.C
A8
G
A9
A10
A11
H
N.C
48-µBGA Top View
1
LB
I/O9
I/O10
Vss
2
OE
UB
I/O11
I/O12
3
A0
A3
A5
N.C
4
A1
A4
A6
A7
5
A2
CS
I/O2
I/O4
6
N.C
I/O1
I/O3
Vcc
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A7
A6
A5
A4
A3
A2
A1
Precharge circuit.
Vcc
Vss
Memory array
1024 rows
64×16 columns
44-TSOP2
Forward
Row
select
Vcc
I/O15
I/O16
N.C
I/O13
I/O14
N.C
A8
N.C
A14
A12
A9
N.C
A15
A13
A10
I/O5
I/O6
WE
A11
Vss
I/O7
I/O
1
~I/O
8
A0
A15
A14
I/O8
N.C
I/O
9
~I/O
16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Name
CS
OE
WE
A
0
~A
15
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Name
LB
UB
Vcc
Vss
Function
Lower Byte(I/O
1
~
8
)
Upper Byte(I/O
9
~
16
)
Power
Ground
WE
OE
UB
LB
CS
A10
A13
A12
A11 A9 A8
Control
logic
I/O
1
~I/O
16
Data Inputs/Outputs
N.C. No Connection
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 3.0
May 1999
K6F1016V3M, K6F1016S3M, K6F1016R3M Family
PRODUCT LIST
Commercial Temperature Products(0~70°C)
Part Name
K6F1016V3M-TB70
K6F1016V3M-TB85
K6F1016S3M-TB12
K6F1016S3M-TB15
K6F1016R3M-TB30
Function
44-TSOP2 F, 70ns, 3.3V, LL
44-TSOP2 F, 85ns, 3.3V, LL
44-TSOP2 F, 120/70ns, 2.5/3.0V, LL
44-TSOP2 F, 150/85ns, 2.5/3.0V, LL
44-TSOP2 F, 300ns, 2.0/2.5V, LL
K6F1016R3M-TF30
K6F1016R3M-ZF30
CMOS SRAM
Industrial Temperature Products(-40~85°C)
Part Name
K6F1016V3M-TF70
K6F1016V3M-TF85
K6F1016S3M-TF12
K6F1016S3M-TF15
K6F1016S3M-ZF15
Function
44-TSOP2 F, 70ns, 3.3V, LL
44-TSOP2 F, 85ns, 3.3V, LL
44-TSOP2 F, 120/70ns, 2.5/3.0V, LL
44-TSOP2 F, 150/85ns, 2.5/3.0V, LL
48-µBGA, 2.5V/3.0V, 150/100ns
44-TSOP2 F, 300ns, 2.0/2.5V, LL
48-µBGA, 1.8V/2.5V, 300ns
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
L
L
L
L
L
OE
X
1)
H
X
1)
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
H
X
1)
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
H
L
L
H
L
UB
X
1)
X
1)
H
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care. (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Soldering temperature and time
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.2 to 3.6V
2)
-0.2 to 4.0V
3)
1.0
-55 to 150
0 to 70
-40 to 85
T
SOLDER
260°C, 5sec(Lead Only)
Unit
V
V
W
°C
°C
°C
-
Remark
-
-
-
-
K6F1016V3M-C
,
K6F1016S3M-C
,
K6F1016R3M-C
K6F1016V3M-
I,
K6F1016S3M-
I,
K6F1016R3M-
I
-
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. V
IN
/V
OUT
=-0.2 to 3.9V for K6F1016V3M Family.
3. V
CC
=-0.2 to 4.6V for K6F1016V3M Family.
3
Revision 3.0
May 1999
K6F1016V3M, K6F1016S3M, K6F1016R3M Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Symbol
Product
K6F1016V3M Family
Supply voltage
Vcc
K6F1016S3M Family
K6F1016R3M Family
Ground
Vss
All Family
K6F1016V3M Family
K6F1016S3M Family
Vcc=3.3±0.3V
Vcc=3.0±0.3V
Vcc=2.5±0.2V
K6F1016R3M Family
Input low voltage
V
IL
All Family
Vcc=2.5±0.2V
Vcc=2.0±0.2V
Min
3.0
2.3
1.8
0
2.2
2.2
2.0
2.0
1.6
-0.2
3)
-
-
Typ
3.3
2.5/3.0
2.0/2.5
0
CMOS SRAM
Max
3.6
3.3
2.7
0
V
V
Unit
Input high voltage
V
IH
Vcc+0.2
2)
V
0.4
V
Note
1 Commercial Product : T
A
=0 to 70°C, unless otherwise specified
Industrial Product : T
A
=-40 to 85°C, unless otherwise specified
2. Overshoot : Vcc + 1.0V in case of pulse width
≤20ns
3. Undershoot : -1.0V in case of pulse width
≤20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
Cycle time=Min, 100% duty,
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
2.1mA at Vcc=3.0/3.3V
Output low voltage
V
OL
I
OL
0.5mA at Vcc=2.5V
0.33mA at Vcc=2.0V
-1.0mA at Vcc=3.0/3.3V
Output high voltage
V
OH
I
OH
-0.5mA at Vcc=2.5V
-0.44mA at Vcc=2.0V
Standby Current(TTL)
Standby Current(CMOS)
I
SB
I
SB1
CS=V
IH
, Other inputs=V
IL
or V
IH
CS≥Vcc-0.2V, Other inputs=0~Vcc
2.4
2.0
1.6
-
-
-
-
-
-
-
-
-
-
0.3
5
1)
mA
µA
V
-
-
0.4
V
V
IN
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA,
CS≤0.2V, V
IN
≤0.2V
or V
IN
≥V
CC
-0.2V
Read
Write
Test Conditions
Min
-1
-1
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
1
1
2
5
20
65
55
20
mA
Unit
µA
µA
mA
mA
Vcc=3.3V@70ns
Vcc=2.7V@120ns
Vcc=2.2V@300ns
1. Super low power product=1µA with special handling.
4
Revision 3.0
May 1999
K6F1016V3M, K6F1016S3M, K6F1016R3M Family
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level: 0.4 to 2.2V for Vcc=3.3V, 3.0V, 2.5V
0.4 to 1.8V for Vcc=2.0V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V for Vcc=3.3V, 3.0V
1.1V for Vcc=2.5V
0.9V for Vcc=2.0V
Output load (See right):C
L
=100pF+1TTL
C
L
=30pF+1TTL
V
TM
3)
R
1
2)
CMOS SRAM
C
L
1)
R
2
2)
1. Including scope and jig capacitance
2. R
1
=3070Ω
,
R
2
=3150Ω
3. V
TM
=2.8V for V
CC
=3.0/3.3V
=2.3V for V
CC
=2.5V
=1.8V for V
CC
=2.0V
AC CHARACTERISTICS
(Commercial product:T
A
=0 to 70°C, Industrial product: T
A
=-40 to 85°C
K6F1016V3M
Family: Vcc=3.0~3.6V,
K6F1016S3M
Family: Vcc=2.3~3.3V,
K6F1016R3M
Family: Vcc=1.8~2.7V)
Speed Bins
Parameter List
Symbol
70ns
85ns
100ns
120ns
150ns
300ns
Units
Min Max Min Max Min Max Min Max Min Max Min Max
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Read
UB, LB Access Time
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write UB, LB Valid to End of Write
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
t
RC
t
AA
t
CO
t
OE
t
BA
t
LZ
t
OLZ
, t
BLZ
t
HZ
t
OHZ
, t
BHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
WP
t
BW
t
WR
t
WHZ
t
DW
t
DH
t
OW
70
-
-
-
-
10
5
0
0
10
70
65
0
65
55
65
0
0
30
0
5
-
70
70
35
35
-
-
25
25
-
-
-
-
-
-
-
-
25
-
-
-
85
-
-
-
-
10
5
0
0
15
85
70
0
70
60
70
0
0
35
0
5
-
85
85
45
45
-
-
25
25
-
-
-
-
-
-
-
-
25
-
-
-
100
-
-
-
-
10
5
0
0
15
100
80
0
80
70
80
0
0
40
0
5
-
100
100
50
50
-
-
30
30
-
-
-
-
-
-
-
-
30
-
-
-
120
-
-
-
-
20
20
0
0
15
120
100
0
100
80
100
0
0
50
0
5
-
120
120
60
60
-
-
35
35
-
-
-
-
-
-
-
-
35
-
-
-
150
-
-
-
-
20
20
0
0
15
150
120
0
120
100
120
0
0
60
0
5
-
150
150
75
75
-
-
40
40
-
-
-
-
-
-
-
-
40
-
-
-
300
-
-
-
-
50
30
0
0
30
300
300
0
300
200
300
0
0
120
0
20
-
300
300
150
150
-
-
60
60
-
-
-
-
-
-
-
-
60
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
CS≥Vcc-0.2V
Vcc=3.0V
See data retention waveform
Min
1.5
-
0
t
RC
Typ
-
-
-
-
Max
3.6
5.0
1)
-
-
Unit
V
µA
ns
1. Super low power product=1µA with special handling.
5
Revision 3.0
May 1999
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