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K6R4008C1C-JE10T

Description
Standard SRAM, 512KX8, 10ns, CMOS, PDSO36
Categorystorage    storage   
File Size132KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K6R4008C1C-JE10T Overview

Standard SRAM, 512KX8, 10ns, CMOS, PDSO36

K6R4008C1C-JE10T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSOJ, SOJ36,.44
Reach Compliance Codeunknown
Maximum access time10 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-J36
JESD-609 codee0
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of terminals36
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ36,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.01 A
Minimum standby current4.5 V
Maximum slew rate0.185 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating).
Operated at Extended and Industrial Temperature Ranges.
Revision History
Rev No.
Rev. 0.0
Rev. 1.0
History
Initial release with Preliminary.
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed I
SB1
to 20mA
2.1 Relax D.C parameters.
Item
I
CC
12ns
15ns
20ns
Previous
170mA
165mA
160mA
Current
195mA
190mA
185mA
Draft Data
Feb. 12. 1999
Mar. 29. 1999
Remark
Preliminary
Preliminary
Rev. 2.0
Aug. 19. 1999
Preliminary
2.2 Relax Absolute Maximum Rating.
Item
Voltage on Any Pin Relative to Vss
Rev. 3.0
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
I
CC
-
195mA
190mA
185mA
Previous
I
sb
70mA
I
sb1
20mA
I
CC
170mA
160mA
150mA
140mA
Current
I
sb
60mA
I
sb1
10mA
Previous
-0.5 to 7.0
Current
-0.5 to Vcc+0.5
Mar. 27. 2000
Final
10ns
12ns
15ns
20ns
3.3 Added Extended temperature range
Rev. 4.0
Delete 20ns speed bin
Sep. 24. 2001
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 4.0
September 2001
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