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K7B801825A-HC850

Description
Cache SRAM, 512KX18, 8.5ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size573KB,21 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7B801825A-HC850 Overview

Cache SRAM, 512KX18, 8.5ns, CMOS, PBGA119, BGA-119

K7B801825A-HC850 Parametric

Parameter NameAttribute value
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time8.5 ns
JESD-30 codeR-PBGA-B119
length22 mm
memory density9437184 bit
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of terminals119
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX18
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
width14 mm
Base Number Matches1
K7B803625A
K7B801825A
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
Revision History
Rev. No.
0.0
1.0
History
Initial draft
1. Final spec Release.
Draft Date
May. 24 . 2000
July. 03. 2000
Remark
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
July 2000
Rev 1.0
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