K3N4U1000D-TE120 datasheet, PDF

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K3N4U1000D-TE120: DescriptionMASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44; Categorystorage storage; File Size48KB，3 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K3N4U1000D-TE120 Overview

MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

K3N4U1000D-TE120 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TSOP2
package instruction	TSOP2,
Contacts	44
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	120 ns
Spare memory width	8
JESD-30 code	R-PDSO-G44
length	18.41 mm
memory density	8388608 bit
Memory IC Type	MASK ROM
memory width	16
Number of functions	1
Number of terminals	44
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	10.16 mm
Base Number Matches	1

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K3N4V(U)1000D-TC(E)

8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM

FEATURES

•

Switchable organization

1,048,576 x 8(byte mode)

524,288 x 16(word mode)

•

Fast access time :

3.3V operation : 100ns(Max.)

3.0V operation : 120ns(Max.)

•

Supply voltage : single +3.0V single +3.3V

•

Current consumption

Operating : 30mA(Max.)

Standby : 30µA(Max.)

•

Fully static operation

•

All inputs and outputs TTL compatible

•

Three state outputs

Package

-. K3N4V(U)1000D-TC(E) : 44-TSOP2-400

CMOS MASK ROM

GENERAL DESCRIPTION

The K3N4V(U)1000D-TC(E) is a fully static mask programma-

ble ROM fabricated using silicon gate CMOS process technol-

ogy, and is organized either as 1,048,576 x 8 bit(byte mode) or

as 524,288 x 16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

This device operates with 3.0V or 3.3V power supply, and all

inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The K3N4V(U)1000D-TC(E) is packaged in a 44-TSOP2.

FUNCTIONAL BLOCK DIAGRAM

-1

. . .

BHE

CONTROL

LOGIC

BUFFERS

AND

DECODER

MEMORY CELL

MATRIX

(524,288x16/

1,048,576x8)

PRODUCT INFORMATION

Product

K3N4V(U)1000D-TC

K3N4V(U)1000D-TE

Operating

Temp

0°C~70°C

-20°C~85°C

Vcc

Range

3.3V/

3.0V

Speed

(ns)

100/

120

PIN CONFIGURATION

BUFFERS

AND

DECODER

SENSE AMP.

DATA OUT

BUFFERS

N.C

44 N.C

43 N.C

42 A

41 A

40 A

39 A

38 A

37 A

36 A

35 A

34 A

33 BHE

32 V

31 Q

-1

30 Q

29 Q

28 Q

27 Q

26 Q

25 Q

24 Q

23 V

CE 12

OE 14

Pin Name

- A

- Q

-1

BHE

N.C

Pin Function

Address Inputs

Data Outputs

Output 15(Word mode)/

LSB Address(Byte mode)

Word/Byte selection

Chip Enable

Output Enable

Power

Ground

No Connection

TSOP2

K3N4V(U)1000D-TC(E)

K3N4U1000D-TE120 Related Products

	K3N4U1000D-TE120	K3N4V1000D-TC10	K3N4V1000D-TC100	K3N4V1000D-TE100	K3N4V1000D-TE10	K3N4U1000D-TC120	K3N4U1000D-TE12	K3N4U1000D-TC12
Description	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	MASK ROM, 512KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	MASK ROM, 512KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	MASK ROM, 512KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	MASK ROM, 512KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
package instruction	TSOP2,	TSOP2, TSOP44,.46,32	TSOP2,	TSOP2,	TSOP2, TSOP44,.46,32	TSOP2,	0.400 INCH, TSOP2-44	TSOP2, TSOP44,.46,32
Contacts	44	44	44	44	44	44	44	44
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	120 ns	100 ns	100 ns	100 ns	100 ns	120 ns	120 ns	120 ns
Spare memory width	8	8	8	8	8	8	8	8
JESD-30 code	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44
length	18.41 mm	18.41 mm	18.41 mm	18.41 mm	18.41 mm	18.41 mm	18.41 mm	18.41 mm
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM
memory width	16	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	44	44	44	44	44	44	44	44
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	70 °C	85 °C	85 °C	70 °C	85 °C	70 °C
organize	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	NOT SPECIFIED	240	240	NOT SPECIFIED	240	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	3.3 V	3.6 V	3.6 V	3.6 V	3.6 V	3.3 V	3.3 V	3.3 V
Minimum supply voltage (Vsup)	2.7 V	3 V	3 V	3 V	3 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3.3 V	3.3 V	3.3 V	3.3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	COMMERCIAL	COMMERCIAL	OTHER	OTHER	COMMERCIAL	OTHER	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	NOT SPECIFIED	30	30	NOT SPECIFIED	30	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Maker	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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