Features
•
Operating Voltage: 3.3V, 5V tolerant
•
Access Time:
•
•
•
•
•
•
•
•
•
•
– 17 ns
– 15 ns
Very Low Power Consumption
– Active: 610 mW (Max) @ 17 ns
(1)
, 540 mW (Max) @ 25 ns
– Standby: 3.3 mW (Typ)
Wide Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Designed on 0.25 µm Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
500 Mils Wide FP36 Package
ESD Better than 2000V
Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208
1. 650 mW (Max) @ 15 ns
Note:
Description
The AT60142FT is a very low power CMOS static RAM organized as 512K x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142FT combines an
extremely low standby supply current (Typical value = 1 mA) with a fast access time at
15 ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The AT60142FT is processed according to the methods of the latest revision of the
MIL PRF 38535 or ESCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Rad Hard
512K x 8
5V Tolerant
Very Low Power
CMOS SRAM
AT60142FT
Rev. 7726A–AERO–07/07
1
AT60142FT
Electrical Characteristics
Absolute Maximum Ratings*
Supply Voltage to GND Potential:.........................-0.5V + 4.6V
DC Input Voltage:...........................................GND -0.5V to 7V
DC Output Voltage High Z State: ................GND -0.5V to 4.6V
Storage Temperature: ................................... -65°C to + 150°C
Output Current Into Outputs (Low): ............................... 20 mA
Electro Statics Discharge Voltage:..... .........> 2000V (MIL STD
883D Method 3015.3)
*NOTE:
Stresses beyond those listed under "Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions
beyond those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect device reliability.
Military Operating Range
Operating Voltage
Military
3.3
+
0.3V
Operating Temperature
-55°C to + 125°C
Recommended DC Operating Conditions
Parameter
Vcc
GND
V
IL
V
IH
Note:
Description
Supply voltage
Ground
Input low voltage
Input high voltage
Min
3
0.0
GND - 0.3
2.2
Typ
3.3
0.0
0.0
–
Max
3.6
0.0
0.8
5.5
(1)
Unit
V
V
V
V
1. 5.8V in transient conditions.
Capacitance
Parameter
C
in(1)
C
out(1)
Note:
Description
Input capacitance
Output capacitance
Min
–
–
Typ
–
–
Max
12
12
Unit
pF
pF
1. Guaranteed but not tested.
4
7726A–AERO–07/07
京公网安备 11010802033920号
EEWORLD
