STGB10HF60KD
STGF10HF60KD, STGP10HF60KD
10 A - 600 V - short-circuit rugged IGBT
Features
■
■
■
■
■
■
Low on-voltage drop (V
CE(sat)
)
Operating junction temperature up to 175 °C
Low C
res
/ C
ies
ratio (no cross conduction
susceptibility)
Tight parameter distribution
Ultrafast soft-recovery antiparallel diode
Short-circuit rugged
3
1
2
TO-220FP
TAB
Applications
■
■
■
Motor drives
High frequency inverters
SMPS and PFC in both hard switch and
resonant topologies
Description
bs
O
This device utilizes the advanced PowerMESH™
process for the IGBT and the Turbo 2 Ultrafast
high voltage technology for the diode. The
combination results in a very good trade-off
between conduction losses and switching
behavior rendering the product ideal for diverse
high voltage applications operating at high
frequencies.
et
l
o
ro
P
e
uc
d
s)
t(
O
-
Figure 1.
so
b
te
le
r
P
d
o
3
1
ct
u
TO-220
s)
(
1
2
3
D²PAK
Internal schematic diagram
Table 1.
Device summary
Marking
GB10HF60KD
GF10HF60KD
GP10HF60KD
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
Order codes
STGB10HF60KDT4
STGF10HF60KD
STGP10HF60KD
February 2012
Doc ID 16136 Rev 2
1/13
www.st.com
13
Contents
STGx10HF60KD
Contents
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuits
............................................... 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
2/13
Doc ID 16136 Rev 2
STGx10HF60KD
Electrical ratings
1
Table 2.
Symbol
V
CES
I
C(1)
I
C(1)
I
CL (2)
I
CP (3)
V
GE
I
F
I
FSM
V
ISO
P
TOT
t
scw
T
j
1.
Electrical ratings
Absolute maximum ratings
Value
Parameter
D²PAK, TO-220
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at T
C
= 25 °C
Collector current (continuous) at T
C
= 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
C
= 25 °C
Surge non repetitive forward current t
p
= 10 ms
sinusoidal
Isolations withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; T
C
= 25 °C)
Total dissipation at T
C
= 25 °C
20
10
TBD
TBD
±20
10
600
9
6
TO-220FP
V
A
Unit
Short-circuit withstand time, V
CE
= 0.5V
(BR)CES
,
T
C
= 125 °C, R
G
= 10
Ω,
V
GE
= 12 V
Operating junction temperature
Calculated according to the iterative formula:
2. Vclamp = 80% of V
CES
, T
j
=175 °C, R
G
=10
Ω,
V
GE
=15 V
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
bs
O
et
l
o
ro
P
e
T
j
(
max
)
–
T
C
I
C
(
T
C
)
= -------------------------------------------------------------------------------------------------------
R
thj
–
c
×
V
CE
(
sat
) (
max
)
(
T
j
(
max
)
,
I
C
(
T
C
) )
uc
d
s)
t(
O
-
so
b
t
le
P
e
-
80
5
20
ro
uc
d
30
s)
t(
A
A
A
V
A
A
2500
V
W
µs
°C
– 40 to 175
Table 3.
Symbol
Thermal data
Value
Parameter
D²PAK
TO-220
1.8
4
62.5
Unit
TO-220FP
5
7
62.5
°C/W
°C/W
°C/W
R
thj-case
Thermal resistance junction-case IGBT
R
thj-case
Thermal resistance junction-case diode
R
thj-amb
Thermal resistance junction-ambient
Doc ID 16136 Rev 2
3/13
Electrical characteristics
STGx10HF60KD
2
Electrical characteristics
T
j
= 25 °C unless otherwise specified.
Table 4.
Symbol
V
(BR)CES
V
CE(sat)
V
GE(th)
I
GES
I
CES
g
fs (1)
Static
Parameter
Test conditions
Min.
600
2
1.6
4.5
Typ. Max. Unit
V
V
V
Collector-emitter breakdown
I
C
= 1 mA
voltage (V
GE
= 0)
Collector-emitter saturation
voltage
Gate threshold voltage
Gate-emitter leakage
current (V
CE
= 0)
Collector cut-off current
(V
GE
= 0)
Forward transconductance
V
GE
= 15 V, I
C
= 5 A
V
GE
= 15 V, I
C
= 5 A, T
j
= 150 °C
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= ±20 V, T
j
= 150 °C
V
CE
= 600 V
V
CE
= 600 V, T
j
= 150 °C
V
CE
= 15 V
,
I
C
= 5 A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
bs
O
et
l
o
od
r
P
e
uc
s)
t(
O
-
so
b
te
le
r
P
d
o
uc
3
s)
t(
6.5
±100
150
1
V
nA
µA
mA
S
Test conditions
Min.
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
Max. Unit
pF
pF
pF
nC
nC
nC
V
CE
= 25 V, f = 1 MHz, V
GE
= 0
-
-
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 390 V, I
C
= 5 A,
V
GE
= 15 V
(see Figure 3)
-
-
4/13
Doc ID 16136 Rev 2
STGx10HF60KD
Electrical characteristics
Table 6.
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
V
CC
= 390 V, I
C
= 5 A
R
G
= 10
Ω,
V
GE
= 15 V,
(see Figure 2)
V
CC
= 390 V, I
C
= 5 A
R
G
= 10
Ω,
V
GE
= 15 V,
T
j
= 150 °C
(see Figure 2)
V
CC
= 390 V, I
C
= 5 A,
R
GE
= 10
Ω,
V
GE
= 15 V
(see Figure 2)
V
CC
= 390 V, I
C
= 5 A,
R
GE
= 10
Ω,
V
GE
= 15 V
T
j
= 150 °C
(see Figure 2)
Min.
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max. Unit
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
-
-
-
-
-
Table 7.
Symbol
Eon
(1)
E
off (2)
E
ts
Eon
(1)
E
off (2)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
bs
O
et
l
o
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same
temperature (25°C and 125°C)
r
P
e
od
uc
s)
t(
O
-
so
b
te
le
ro
P
-
Min
-
uc
d
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
s)
t(
-
-
Test conditions
Max
Unit
µJ
µJ
µJ
µJ
µJ
µJ
V
CC
= 390 V, I
C
= 5 A
R
G
= 10
Ω,
V
GE
= 15 V,
(see Figure 2)
V
CC
= 390 V, I
C
= 5 A
R
G
= 10
Ω,
V
GE
= 15 V,
T
j
= 150 °C
(see Figure 2)
-
-
-
2. Turn-off losses include also the tail of the collector current.
Table 8.
Symbol
V
F
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
= 5 A
I
F
= 5 A, T
j
= 150 °C
I
F
= 5 A, V
R
= 40 V,
di/dt = 100 A/µs
(see Figure 5)
I
F
= 5 A, V
R
= 40 V,
T
j
= 150 °C,
di/dt = 100 A/µs
(see Figure 5)
Min
-
Typ.
2.1
1.8
24
17
1.5
TBD
TBD
TBD
Max
2.4
Unit
V
V
ns
nC
A
ns
nC
A
-
-
Doc ID 16136 Rev 2
5/13
京公网安备 11010802033920号
EEWORLD
