10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| Parameter Name | Attribute value |
| Number of terminals | 3 |
| Minimum breakdown voltage | 600 V |
| Processing package description | 2-10R1B, SC-67, 3 PIN |
| state | EOL/LIFEBUY |
| packaging shape | Rectangle |
| Package Size | Flange mounting |
| Terminal form | THROUGH-hole |
| terminal coating | NOT SPECIFIED |
| Terminal location | single |
| Packaging Materials | Plastic/Epoxy |
| structure | Single WITH BUILT-IN diode |
| Shell connection | isolation |
| Number of components | 1 |
| transistor applications | switch |
| Transistor component materials | silicon |
| Channel type | N channel |
| field effect transistor technology | Metal-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT |
| Transistor type | universal power supply |
| Maximum leakage current | 10 A |
| Rated avalanche energy | 363 mJ |
| Maximum drain on-resistance | 0.7500 ohm |
| Maximum leakage current pulse | 40 A |