a
FEATURES
1.8 V to 5.5 V Single Supply
4 (Max) On Resistance
Low On Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
8-Lead MSOP Package
Fast Switching Times
20 ns
t
ON
t
OFF
10 ns
Low Power Consumption (<0.1
TTL/CMOS Compatible
CMOS
Low Voltage 4 Dual SPST Switches
ADG721/ADG722/ADG723
FUNCTIONAL BLOCK DIAGRAMS
ADG721
S1
IN1
D1
D2
IN2
S2
IN2
S2
D1
D2
S1
IN1
ADG722
W)
ADG723
S1
IN1
D1
D2
IN2
S2
APPLICATIONS
USB 1.1 Signal Switching Circuits
Cell Phones
PDAs
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
SWITCHES SHOWN FOR A LOGIC "0" INPUT
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG721, ADG722, and ADG723 are monolithic CMOS
SPST switches. These switches are designed on an advanced
submicron process that provides low power dissipation yet gives
high switching speed, low on resistance, and low leakage currents.
The ADG721, ADG722, and ADG723 are designed to operate
from a single 1.8 V to 5.5 V supply, making them ideal for use
in battery-powered instruments and with the new generation of
DACs and ADCs from Analog Devices.
The ADG721, ADG722, and ADG723 contain two independent
single-pole/single-throw (SPST) switches. The ADG721 and
ADG722 differ only in that both switches are normally open and
normally closed, respectively. While in the ADG723, Switch 1 is
normally open and Switch 2 is normally closed.
Each switch of the ADG721, ADG722, and ADG723 conducts
equally well in both directions when on. The ADG723 exhibits
break-before-make switching action.
1. 1.8 V to 5.5 V Single-Supply Operation.
The ADG721, ADG722, and ADG723 offer high perfor-
mance, including low on resistance and fast switching times,
and are fully specified and guaranteed with 3 V and 5 V
supply rails.
2. Very Low R
ON
(4
W
max at 5 V, 10
W
max at 3 V).
At 1.8 V operation, R
ON
is typically 40
W
over the tempera-
ture range.
3. Low On Resistance Flatness.
4. –3 dB Bandwidth > 200 MHz.
5. Low Power Dissipation.
CMOS construction ensures low power dissipation.
6. Fast t
ON
/t
OFF
.
7. 8-Lead MSOP.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© 2004 Analog Devices, Inc. All rights reserved.
ADG721/ADG722/ADG723–SPECIFICATIONS
(V
DD
= 5 V
10%, GND = 0 V. All specifications –40 C to +85 C, unless otherwise noted.)
B Version
–40 C to
+25 C
+85 C
0 V to V
DD
5
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match between
Channels (DR
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
(ADG723 Only)
Charge Injection
Off Isolation
Unit
V
W
max
W
typ
W
max
W
typ
W
max
1
Test Conditions/Comments
4
V
S
= 0 V to V
DD
, I
S
= –10 mA,
Test Circuit 1
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
DD
= 5.5 V
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V
Test Circuit 2
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V
Test Circuit 2
V
S
= V
D
= 1 V, or V
S
= V
D
= 4.5 V
Test Circuit 3
0.3
1.0
0.85
1.5
±
0.01
±
0.25
±
0.01
±
0.25
±
0.01
±
0.25
±
0.35
±
0.35
±
0.35
2.4
0.8
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
mA
typ
mA
max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
0.005
±
0.1
V
IN
= V
INL
or V
INH
14
20
6
10
7
1
2
–60
–80
–77
–97
200
7
7
18
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
R
L
= 300
W,
C
L
= 35 pF
V
S
= 3 V, Test Circuit 4
R
L
= 300
W,
C
L
= 35 pF
V
S
= 3 V, Test Circuit 4
R
L
= 300
W,
C
L
= 35 pF,
V
S1
= V
S2
= 3 V, Test Circuit 5
V
S
= 2 V; R
S
= 0
W,
C
L
= 1 nF,
Test Circuit 6
R
L
= 50
W,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
W,
C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
R
L
= 50
W,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
W,
C
L
= 5 pF, f = 1 MHz,
Test Circuit 8
R
L
= 50
W,
C
L
= 5 pF, Test Circuit 9
0.001
1.0
mA
typ
mA
max
V
DD
= 5.5 V
Digital Inputs = 0 V or 5 V
NOTES
1
Temperature range: B Version, –40∞C to +85∞C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. A
SPECIFICATIONS
1
(V
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Match between
Channels (DR
ON
)
ADG721/ADG722/ADG723
DD
=3V
10%, GND = 0 V. All specifications –40 C to +85 C, unless otherwise noted.)
B Version
–40 C to
+25 C
+85 C
0 V to V
DD
6.5
10
0.3
1.0
3.5
±
0.01
±
0.25
±
0.01
±
0.25
±
0.01
±
0.25
Unit
V
W
typ
W
max
W
typ
W
max
W
typ
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
mA
typ
mA
max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
Test Conditions/Comments
V
S
= 0 V to V
DD
, I
S
= –10 mA
Test Circuit 1
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
S
= 0 V to V
DD
, I
S
= –10 mA
V
DD
= 3.3 V
V
S
= 3 V/1 V, V
D
= 1 V/3 V
Test Circuit 2
V
S
= 3 V/1 V, V
D
= 1 V/3 V
Test Circuit 2
V
S
= V
D
= 1 V, or 3 V
Test Circuit 3
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
(ADG723 Only)
Charge Injection
Off Isolation
±
0.35
±
0.35
±
0.35
2.0
0.4
0.005
±
0.1
V
IN
= V
INL
or V
INH
16
24
7
11
7
1
2
–60
–80
–77
–97
200
7
7
18
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
R
L
= 300
W,
C
L
= 35 pF
V
S
= 2 V, Test Circuit 4
R
L
= 300
W,
C
L
= 35 pF
V
S
= 2 V, Test Circuit 4
R
L
= 300
W,
C
L
= 35 pF,
V
S1
= V
S2
= 2 V, Test Circuit 5
V
S
= 1.5 V; R
S
= 0
W,
C
L
= 1 nF,
Test Circuit 6
R
L
= 50
W,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
W,
C
L
= 5 pF, f = 1 MHz,
Test Circuit 7
R
L
= 50
W,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
W,
C
L
= 5 pF, f = 1 MHz,
Test Circuit 8
R
L
= 50
W,
C
L
= 5 pF,
Test Circuit 9
0.001
1.0
mA
typ
mA
max
V
DD
= 3.3 V
Digital Inputs = 0 V or 3 V
NOTES
1
Temperature range: B Version, –40∞C to +85∞C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
–3–
ADG721/ADG722/ADG723
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C unless otherwise noted)
Table I. Truth Table (ADG721/ADG722)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog, Digital Inputs
2
. . . . . . . . . . –0.3 V to V
DD
+ 0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
MSOP Package, Power Dissipation . . . . . . . . . . . . . . . 450 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ADG721 In
0
1
ADG722 In
1
0
Switch Condition
OFF
ON
Table II. Truth Table (ADG723)
Logic
0
1
Switch 1
OFF
ON
Switch 2
ON
OFF
ORDERING GUIDE
Model
ADG721BRM
ADG721BRM-REEL
ADG721BRM-REEL7
ADG721BRMZ
2
ADG721BRMZ-REEL
2
ADG721BRMZ-REEL7
2
ADG722BRM
ADG722BRM-REEL
ADG722BRM-REEL7
ADG722BRMZ
2
ADG722BRMZ-REEL
2
ADG722BRMZ-REEL7
2
ADG723BRM
ADG723BRM-REEL
ADG723BRM-REEL7
Temperature Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Branding
1
S6B
S6B
S6B
S6B
S6B
S6B
S7B
S7B
S7B
S7B
S7B
S7B
S8B
S8B
S8B
Package Description
MSOP
MSOP
MSOP
MSOP
MSOP
MSOP
MSOP
MSOP
MSOP
MSOP
MSOP
MSOP
MSOP
MSOP
MSOP
Package Option
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
RM-8
NOTES
1
Branding = Due to package size limitations, these three characters represent the part number.
2
Z = Pb-free part.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG721/ADG722/ADG723 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. A
ADG721/ADG722/ADG723
PIN CONFIGURATION
8-Lead MSOP (RM-8)
S1
1
D1
2
IN2
3
6
D2
TOP VIEW
GND
4
(Not to Scale)
5
S2
ADG721/
ADG722/
ADG723
8
V
DD
7
IN1
TERMINOLOGY
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input.
Ohmic resistance between D and S.
On resistance match between any two channels i.e., R
ON
max – R
ON
min.
Flatness is defined as the difference between the maximum and minimum value of on
resitance as measured over the specified analog signal range.
Source leakage current with the switch OFF.
I
S
(OFF)
Drain leakage current with the switch OFF.
I
D
(OFF)
Channel leakage current with the switch ON.
I
D
, I
S
(ON)
Analog voltage on terminals D, S.
V
D
(V
S
)
OFF Switch Source Capacitance.
C
S
(OFF)
OFF Switch Drain Capacitance.
C
D
(OFF)
ON Switch Capacitance.
C
D
, C
S
(ON)
Delay between applying the digital control input and the output switching on.
t
ON
Delay between applying the digital control input and the output switching off.
t
OFF
t
D
OFF time or ON time measured between the 90% points of both switches, when
switching from one address state to another (ADG723 Only).
Crosstalk
A measure of unwanted signal that is coupled through from one channel to another as a
result of parasitic capacitance.
Off Isolation
A measure of unwanted signal coupling through an OFF switch.
Charge Injection A measure of the glitch impulse transferred during switching.
V
DD
GND
S
D
IN
R
ON
DR
ON
R
FLAT(ON)
REV. A
–5–
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