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C-13-001-E-AD-G5

Description
Laser Diode, 1310nm, HERMETIC SEALED, TO-18, 4 PIN
CategoryLED optoelectronic/LED    photoelectric   
File Size227KB,5 Pages
ManufacturerSource Photonics
Download Datasheet Parametric View All

C-13-001-E-AD-G5 Overview

Laser Diode, 1310nm, HERMETIC SEALED, TO-18, 4 PIN

C-13-001-E-AD-G5 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionHERMETIC SEALED, TO-18, 4 PIN
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Optoelectronic device typesLASER DIODE
Nominal output power10 mW
peak wavelength1310 nm
shapeROUND
size1 mm
Maximum threshold current15 mA
Base Number Matches1
P/N: C-13-001-E-XX
1310nm Laser Diodes
Features
Uncooled laser diode with MQW structure
5mW CW operation at –40 to +85ºC
High temperature operation without active cooling
Hermetically sealed active component
Built-in InGaAs monitor photodiode
Complies with Telcordia(Bellcore) GR-468-CORE
TO-56 packaging with a flat window cap or a ball lens
cap
RoHS compliance available
Absolute Maximum Rating (Tc=25ºC)
Parameter
Optical Output Power
LD Reverse Voltage
LD Forward Current
PD Reverse Voltage
PD Forward Current
Operating Temperature
Storage Temperature
Symbol
Po
V
RLD
I
FLD
V
RPD
I
FPD
T
opr
T
stg
Value
10(CW)
2
150
10
2
-40 to +85
-40 to +85
Unit
mW
V
mA
V
mA
ºC
ºC
Optical and Electrical Characteristics( Tc=25ºC)
Optical and Electrical Characteristics( Tc=25ºC)
Parameter
Slope Efficiency
Flat window cap
Ball lens cap
Threshold Current
Optical output power
Peak Wavelength
Spectral Width
Forward Voltage
Symbol
Min.
Typical
Max.
Unit
Test Condition
SE
0.3
0.2
0.35
0.3
10
-
1310
2
1.2
-
mW/mA
CW,P
o
=5mW
Ith
Po
λ
Δλ
V
F
-
5
1290
-
-
15
-
1330
5
1.5
mA
mW
nm
nm
V
CW,P
o
=5mW
CW,kink free
Note
CW,P
o
=5mW
CW,P
o
=5mW
DS-5669 JUN1609-Rev 00

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