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HMD4M1Z1-6

Description
DRAM
Categorystorage    storage   
File Size173KB,6 Pages
ManufacturerHANBIT Electronics
Websitehttp://www.hbe.co.kr/
Download Datasheet Parametric View All

HMD4M1Z1-6 Overview

DRAM

HMD4M1Z1-6 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
HANBit
HMD4M1Z1
4Mbit(4Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
Part No.
HMD4M1Z1
DESCRIPTION
The HMD4M1Z1 is an 4M x 1 bits Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of
memory cells
within the same row. Power supply voltage (+5V ), access time (-5, -6), power consumption(Normal or Low power), and package
type (ZIP)
are optional features of this Module. The HMD4M1Z1 have CAS-before-RAS refresh, RAS-only refresh and Hidden
refresh capabilities.
The HMD4M1Z1 is optimized for application to the systems, which are required high density and large capacity such as main
memory for main frames and mini computers, personal computer and high performance microprocessor systems.
The HMD4M1Z1 provides common data and outputs.
Features
w
Fast Page Mode operation
w
CAS-before-RAS refresh capability
w
RAS-only and Hidden refresh capability
w
Fast parallel test mode capability
w
TTL(5V) compatible inputs and outputs
w
Early write or output enable controlled write
w
Available in 20pin ZIP packages
w
Single +5V± 10% power supply
w
1,024 Refresh Cycles/16ms
w
Performance Range
Speed
HMD4M1Z1-5
HMD4M1Z1-6
t
RAC
50
60
t
CAC
15
15
t
RC
90
110
t
PC
35
40
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
PIN ASSIGNMENT
SYMBOL
A9
/CAS
DOUT
V
SS
DIN
/WE
/RAS
NC
NC
A9NC
A0
A1
A2
A3
V
CC
A4
A5
A6
A7
A8
PIN DESCRIPTION
PIN
A0
A9
DQ0
DQ3
/RAS
/CAS
FUNCTION
Address Inputs
Data
Input/Output
Row Address
Strobe
Column
Address Strobe
PIN
/WE
Vcc
Vss
NC
FUNCTION
Read/Write
Enable
Power
(+5V)
Ground
No
Connection
14
15
16
17
18
19
20
URL:www.hbe.co.kr
REV.1.0 (August. 2002)
1
HANBit Electronics Co.,Ltd.
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