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5082-2800

Description
SILICON, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size53KB,6 Pages
ManufacturerHP(Keysight)
Websitehttp://www.semiconductor.agilent.com/
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5082-2800 Overview

SILICON, MIXER DIODE

5082-2800 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHP(Keysight)
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance2 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.41 V
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Maximum output current0.015 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage70 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
Schottky Barrier Diodes for
General Purpose Applications
Technical Data
1N5711
1N5712
5082-2300 Series
5082-2800 Series
5082-2900
Features
• Low Turn-On Voltage
As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage
Up to 70 V
• Matched Characteristics
Available
The 5082-2835 is a passivated
Schottky diode in a low cost glass
package. It is optimized for low
turn-on voltage. The 5082-2835 is
particularly well suited for the
UHF mixing needs of the CATV
marketplace.
The 5082-2300 Series and
5082-2900 devices are unpas-
sivated Schottky diodes in a glass
package. These diodes have
extremely low 1/f noise and are
ideal for low noise mixing, and
high sensitivity detecting. They
are particularly well suited for use
in Doppler or narrow band video
receivers.
Outline 15
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
Description/Applications
The 1N5711, 1N5712, 5082-2800/
10/11 are passivated Schottky
barrier diodes which use a
patented “guard ring” design to
achieve a high breakdown
voltage. Packaged in a low cost
glass package, they are well suited
for high level detecting, mixing,
switching, gating, log or A-D
converting, video detecting,
frequency discriminating,
sampling, and wave shaping.
4.32 (.170)
3.81 (.150)
CATHODE
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Maximum Ratings
Junction Operating and Storage Temperature Range
5082-2303, -2900 .................................................................-60°C to +100°C
1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C
5082-2835 ............................................................................ -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at T
CASE
= 25
°
C)
Derate linearly to zero at maximum rated temperature
5082-2303, -2900 .............................................................................. 100 mW
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW
5082-2835 ......................................................................................... 150 mW
Peak Inverse Voltage ................................................................................. V
BR

5082-2800 Related Products

5082-2800 1N5711 1N5712 5082-2810 5082-2835 5082-2300 5082-2303 5082-2811 5082-2900
Description SILICON, MIXER DIODE 0.033 A, SILICON, SIGNAL DIODE, DO-35 SIGNAL DIODE SILICON, VHF-UHF BAND, MIXER DIODE SILICON, UHF BAND, MIXER DIODE TV 21C 21#16 SKT PLUG SILICON, VHF-UHF BAND, MIXER DIODE, DO-35 SILICON, VHF-UHF BAND, MIXER DIODE SILICON, MIXER DIODE
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible - incompatible incompatible incompatible
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 - O-LALF-W2 O-LALF-W2 O-LALF-W2
Contacts 2 2 2 2 2 - 2 2 2
Reach Compliance Code unknown unknown unknown unknown unknow - unknown unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99
Is Samacsys N N N N - - N - -
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED - ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
Maximum diode capacitance 2 pF - - 1.2 pF 1 pF - 1 pF 1.2 pF 1.2 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON - SILICON SILICON SILICON
Diode type MIXER DIODE RECTIFIER DIODE RECTIFIER DIODE MIXER DIODE MIXER DIODE - MIXER DIODE MIXER DIODE MIXER DIODE
Maximum forward voltage (VF) 0.41 V 0.41 V 0.55 V 0.41 V 0.34 V - 0.4 V 0.41 V 0.4 V
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 - O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0 e0 e0 - e0 e0 e0
Number of components 1 1 1 1 1 - 1 1 1
Number of terminals 2 2 2 2 2 - 2 2 2
Maximum operating temperature 200 °C 100 °C 200 °C 200 °C 150 °C - 100 °C 200 °C 100 °C
Maximum output current 0.015 A 0.015 A 0.035 A 0.035 A 0.01 A - 0.035 A 0.02 A 0.02 A
Package body material GLASS GLASS GLASS GLASS GLASS - GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND - ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM - LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 70 V 70 V 20 V 20 V 8 V - 20 V 15 V 10 V
surface mount NO NO NO NO NO - NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY - SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE - WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL - AXIAL AXIAL AXIAL
Base Number Matches 1 1 1 1 1 - 1 1 1
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