EDI8M8512LP100P6I datasheet, PDF

EDI8M8512LP100P6I: DescriptionSRAM Module, 512KX8, 100ns, CMOS,; Categorystorage storage; File Size178KB，8 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI8M8512LP100P6I Overview

SRAM Module, 512KX8, 100ns, CMOS,

Parameter Name	Attribute value
Reach Compliance Code	unknown
Maximum access time	100 ns
JESD-30 code	R-XDMA-T32
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Minimum standby current	2 V
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Base Number Matches	1

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