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SI7445DP-E3

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size39KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

SI7445DP-E3 Overview

Transistor,

SI7445DP-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)12 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)5.4 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
Si7445DP
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.0077 @ V
GS
= –4.5 V
–20
0.0094 @ V
GS
= –2.5 V
0.0125 @ V
GS
= –1.8 V
FEATURES
I
D
(A)
–19
–17
–15
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D
Load Switch Battery Applications
PowerPAKt SO-8
S
6.15 mm
S
1
2
3
S
S
5.15 mm
G
G
4
D
8
7
6
5
D
D
D
D
P-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
–4.3
5.4
3.4
–55 to 150
–15
–50
–1.6
1.9
1.2
W
_C
–9
A
Symbol
V
DS
V
GS
10 secs
Steady State
–20
"8
Unit
V
–19
–12
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71626
S-03835—Rev. A, 28-May-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
_C/W
C/W
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