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SI4483EDY-E3

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size56KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

SI4483EDY-E3 Overview

Transistor

SI4483EDY-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)10 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)3 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
Si4483EDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
−30
FEATURES
I
D
(A)
−14
−11
r
DS(on)
(W)
0.0085 @ V
GS
=
−10
V
0.014 @ V
GS
=
−4.5
V
D
TrenchFETr Power MOSFET
D
ESD Protection: 3000 V
APPLICATIONS
D
Notebook PC
Load Switch
Adapter Switch
S
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4483EDY—E3
Si4483EDY-T1—E3 (with tape and reel)
8
7
6
5
D
D
D
D
G
7100
W
P-Channel
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
−30
"25
Unit
V
−14
−11
−50
−2.7
3.0
1.9
−55
to 150
−10
−8
A
−1.36
1.5
0.95
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72862
S-40580—Rev. A, 29-Mar-04
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
33
70
16
Maximum
42
85
21
Unit
_C/W
C/W
1
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