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IRF540CHIP

Description
28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size70KB,2 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

IRF540CHIP Overview

28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET

IRF540CHIP Parametric

Parameter NameAttribute value
package instructionUNCASED CHIP, S-XUUC-N2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFAST SWITCHING
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)28 A
Maximum drain current (ID)28 A
Maximum drain-source on-resistance0.077 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-XUUC-N2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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