TSOP69..
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP69.. - series are miniaturized receivers for
infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with a high envelope duty cycle datasignal
and the good immunity against disturbance signals
with spike characteristic as well as all continuous dis-
turbance signals.
1
2
3
4
16797
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
• Improved shielding against electrical
field
disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
• Taping available for topview and sideview assem-
bly.
e3
Mechanical Data
Pinning:
1 = GND, 2 = GND, 3 = V
S
, 4 = OUT
Parts Table
Part
TSOP6930
TSOP6933
TSOP6936
TSOP6937
TSOP6938
TSOP6940
TSOP6956
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Special Features
• Enhanced data rate of 4000 bit/s
• Operation with short bursts possible
(≥ 6 cycles/burst)
Block Diagram
Application Circuit
3
25 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
16842
4
OUT
Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
R
1
= 100
Ω
V
S
C
1
=
4.7 µF
V
O
+V
S
OUT
GND
µC
GND
1;2
Control Circuit
GND
R
1
+ C
1
recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
O =
3.3 V by the external circuit.
Document Number 84687
Rev. 1.0, 01-Mar-05
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1
TSOP69..
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
T
amb
≤
85 °C
Pin 3
Pin 3
Pin 4
Pin 4
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
Value
- 0.3 to 6.0
5
- 0.3 to 6.0
15
100
- 40 to + 100
- 25 to + 85
50
Unit
V
mA
V
mA
°C
°C
°C
mW
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current
Test condition
V
S
= 5 V, E
v
= 0
V
S
= 5 V,
E
v
= 40 klx, sunlight
Supply Voltage
Transmission Distance
E
v
= 0, test signal see fig.1,
IR diode TSAL6200,
I
F
= 400 mA
I
OSL
= 0.5 mA,
E
e
= 0.7 mW/m
2
,
test signal see fig. 1
Minimum Irradiance
(30 - 40 kHz)
Minimum Irradiance (56 kHz)
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.3
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.3
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half transmission
distance
E
e min
0.35
0.5
mW/m
2
Symbol
I
SD
I
SH
V
S
d
4.5
35
Min
0.8
Typ.
1.2
1.5
5.5
Max
1.5
Unit
mA
mA
V
m
Output Voltage Low (Pin 4)
V
OSL
250
mV
E
e min
0.4
0.6
mW/m
2
Maximum Irradiance
Directivity
E
e max
ϕ
1/2
30
± 50
W/m
2
deg
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2
Document Number 84687
Rev. 1.0, 01-Mar-05
VISHAY
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
=0.4 A, N=6 pulses, f=f
0
, T=10 ms)
T
on
,T
off
– Output Pulse Width ( ms )
TSOP69..
Vishay Semiconductors
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950 nm,
optical test signal, fig.3
Toff
Ton
t
pi
*)
T
*) t
pi
w
6/fo is recommended for optimal function
Output Signal
V
O
V
OH
V
OL
t
d1 )
1)
2)
t
14337
3/f
0
< t
d
< 9/f
0
t
pi
– 4/f
0
< t
po
< t
pi
+ 6/f
0
t
t
po2 )
10.0
100.0 1000.010000.0
16910
E
e
– Irradiance ( mW/m
2
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
0.35
E
e min
/ E
e
– Rel. Responsivity
t
po
– Output Pulse Width ( ms )
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.7
16926
0.30
Output Pulse
0.25
0.20
0.15
0.10
0.05
0.00
0.1
l
= 950 nm,
optical test signal, fig.1
Input Burst Duration
f = f
0
"5%
Df
( 3dB ) = f
0
/7
0.9
1.1
1.3
1.0
10.0
100.0 1000.010000.0
16907
E
e
– Irradiance ( mW/m
2
)
f/f
0
– Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
E
e
Optical Test Signal
E
e min
– Threshold Irradiance ( mW/m
2
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
= 950 nm
Correlation with ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T = 60 ms
Output Signal,
( see Fig.4 )
600
ms
t
94 8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
(W/m
2
)
100.00
E – Ambient DC Irradiance
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 84687
Rev. 1.0, 01-Mar-05
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TSOP69..
Vishay Semiconductors
E
e min
– Threshold Irradiance ( mW/m
2
)
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f = f
o
f = 10 kHz
1.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15 0
15 30 45 60 75
T
amb
– Ambient Temperature ( C )
Sensitivity in dark ambient
1.5
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
90
16912
16918
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV/m )
S (
λ
)
rel
-
Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0.0
750
850
950
1050
1150
94 8147
16919
λ
-
Wavelength ( nm )
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
1.0
0.9
Max. Envelope Duty Cycle
0°
10°
20°
30°
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20 40 60 80 100 120 140 160 180 200
Burst Length ( number of cycles / burst )
16801
40°
1.0
0.9
0.8
f = 38 kHz, E
e
= 2
mW/m
2
0.7
50°
60°
70°
80°
0.6 0.4 0.2
0
0.2
0.4 0.6
d
rel
-
Relative Transmission Distance
18658
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
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Document Number 84687
Rev. 1.0, 01-Mar-05
VISHAY
Suitable Data Format
The circuit of the TSOP69.. is designed in that way
that unexpected output pulses due to noise or distur-
bance signals are avoided. A bandpass filter, a limiter
stage, an integrator stage and an automatic gain con-
trol are used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 120
cycles a gap time of at least 10 cycles is necessary.
• For each burst which is longer than 3.2 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should have at least same
length as the burst.
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the TSOP69..
it can still receive the data signal. However the sensi-
tivity is reduced to that level that no unexpected
pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP69.. are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
lasts with various kinds of modulation
(see examples in Figure 13 and Figure 14).
TSOP69..
Vishay Semiconductors
IR Signal
IR Signal from fluorescent
lamp with low modulation
0
16920
5
10
Time ( ms )
15
20
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
9
8
7
6
IR Signal
5
4
3
2
1
0
0
2
4
6
Time ( ms )
8
10
18659
Figure 14. IR Signal from a Fluorescent Lamp with Spikes
Document Number 84687
Rev. 1.0, 01-Mar-05
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