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APT33GF120LRD

Description
Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size114KB,8 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Download Datasheet Parametric View All

APT33GF120LRD Overview

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN

APT33GF120LRD Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Other featuresFAST SWITCHING
Shell connectionCOLLECTOR
Maximum collector current (IC)52 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)160 ns
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-264AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)300 W
Certification statusNot Qualified
Maximum rise time (tr)170 ns
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)284 ns
Nominal on time (ton)85 ns
Base Number Matches1
APT33GF120B2RD
APT33GF120LRD
1200V
52A
TO-264
(LRD)
APT33GF120B2RD/LRD
Fast IGBT & FRED
The Fast IGBT
is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT™ combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
APT33GF120B2RD
T-Max
(B2RD)
G
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20KΩ)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
Pulsed Collector Current
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1
1
C
G
E
C
C
E
APT33GF120LRD
G
E
APT33GF120B2RD/LRD
UNIT
All Ratings: T
C
= 25°C unless otherwise specified.
1200
1200
±20
52
33
104
66
300
-55 to 150
300
°C
Watts
Amps
Volts
@ T
C
= 25°C
@ T
C
= 90°C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
1200
4.5
5.5
2.7
3.3
6.5
3.2
3.9
0.5
2
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
2
I
CES
I
GES
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
5.0
±100
mA
nA
052-6254 Rev B 12-2001
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
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