EEWORLDEEWORLDEEWORLD

Part Number

Search

KC807

Description
800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size36KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet Parametric Compare View All

KC807 Overview

800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

KC807 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.8000 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionSOT-23, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.3100 W
Transistor typeUniversal small signal
Minimum DC amplification factor60
Rated crossover frequency100 MHz
SMD Type
PNP Silicon AF Transistors
KC807(BC807)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Rating
-50
-45
-5
-800
310
150
-65 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base emitter on voltage
Output Capacitance
Transition frequency
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
V
CBO
V
CEO
V
EBO
I
CES
I
EBO
h
FE
I
C
= -300 mA, V
CE
= -1 V
V
CE(sat)
I
C
= -500 mA, I
B
= -50 mA
V
BE(on)
V
CE
=-1V,I
C
=300mA
C
ob
f
T
V
CB
=-10V,f=1MHz
I
C
= -10 mA, V
CE
= -5 V, f = 50 MHz
100
60
-0.7
-1.2
12
V
V
pF
MHz
I
C
= -10
Testconditons
A,V
BE
= 0
Min
-50
-45
-5
-100
-100
100
630
Typ
Max
Unit
V
V
V
nA
nA
I
C
= -10 mA, I
B
= 0
I
E
= -10
A, I
C
= 0
V
CB
= -25 V, V
BE
= 0
V
EB
= -4 V, I
C
= 0
I
C
= -100 mA, V
CE
= -1 V
Marking
NO.
Marking
hFE
KC807-16
9FA
100
250
KC807-25
9FB
160
400
KC807-40
9FC
250
630
+0.1
0.38
-0.1
0-0.1
www.kexin.com.cn
1

KC807 Related Products

KC807 BC807 KC807-16 KC807-25 KC807-40
Description 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3 3 3
Transistor polarity PNP PNP PNP PNP PNP
Maximum collector current 0.8000 A 0.8000 A 0.8000 A 0.8000 A 0.8000 A
Maximum Collector-Emitter Voltage 45 V 45 V 45 V 45 V 45 V
Processing package description SOT-23, 3 PIN SOT-23, 3 PIN SOT-23, 3 PIN SOT-23, 3 PIN SOT-23, 3 PIN
state DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location pair pair pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single single single single
Number of components 1 1 1 1 1
transistor applications switch switch switch switch switch
Transistor component materials silicon silicon silicon silicon silicon
Maximum ambient power consumption 0.3100 W 0.3100 W 0.3100 W 0.3100 W 0.3100 W
Transistor type Universal small signal Universal small signal Universal small signal Universal small signal Universal small signal
Minimum DC amplification factor 60 60 60 60 60
Rated crossover frequency 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1069  1519  1124  250  1189  22  31  23  6  24 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号