SMD Type
Epitaxial Planar PNP Transistor
KTA1661
Transistors
Features
High Voltage: V
CEO
=-120V
High Transition Frequency:fT=120MHz
Small Flat Package
Absolute Maximum Ratings Ta = 25
Parameter
Colletor-Base Voltage
Colletor-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Colletor Power Dissipation
Junction Temperature
Storage Temperature Range
* mounted on ceramic substrate (250mm
2
X0.8t)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
j
T
stg
Rating
-120
-120
-5
-800
-160
500
1
150
-55 to 150
Unit
V
V
V
mA
mA
mW
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Colletor Output Capacitance
Symbol
I
CBO
I
EBO
V
(BR)CEO
B
(BR)EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Testconditons
V
CB
=-120V,I
E
=0
V
CE
=5V,I
C
=0
I
C
=-10mA,I
B
=0
I
E
=-1mA,I
C
=0
V
CE
=-5V,I
C
=-100mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-5V,I
C
=-500mA
V
CE
=-5V,I
C
=-100mA
V
CB
=-10V,I
E
=0,f=1MHz
120
30
-120
-5.0
80
240
-1.0
-1.0
V
V
MHz
pF
Min
Typ
Max
-100
-100
Unit
nA
nA
V
V
h
FE
Classification
Marking
Rank
Type
DO
O
80 160
DY
Y
120 240
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1
Embedded System
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