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1SS301

Description
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size40KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet View All

1SS301 Overview

0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE

SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATIONS
1SS301
Features
Low forward voltage:V
F(3)
= 0.90 V(Typ)
Fast reverse recovery time:t
rr
= 1.6 ns (Typ)
Small total capacitance:C
T
= 0.9 pF(Typ)
Absolute M axim um R atings T a = 25
P aram eter
M axim um (peak) reverse voltage
R everse voltage
M axim um (peak) forward current
A verage forward current
S urge current (10 m s)
P ower dissipation
Junction Tem perature
S torage Tem perature
(*) U nit rating.Total rating = U nit rating
1.5
S ym bol
V
RM
V
R
I
F M
I
O
I
F SM
P
T
j
T
stg
R ating
85
80
300(*)
100(*)
2(*)
100
125
-55 to +125
U nit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
V
F(1)
Forward voltage
V
F(2)
V
F(3)
Reverse current
Total capacitance
Reverse recovery time
I
R(1)
I
R(2)
C
t
t
rr
Test Conditions
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 30 V
V
R
= 80 V
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA
0.9
1.6
Min
Typ
0.60
0.72
0.90
1.2
0.1
0.5
3.0
4.0
A
pF
ns
V
Max
Unit
Marking
Marking
B3
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